AO4619 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4619 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Standard Product AO4619 is Pb-free (meets ROHS & Sony 259 specifications). n-channel VDS (V) = 30V ID = 7.4A (V GS=10V) RDS(ON) < 24mΩ (VGS=10V) < 36mΩ (VGS=4.5V) S2 G2 S1 G1 1 2 3 4 D1 D2 D2 D2 D1 D1 8 7 6 5 p-channel -30V -5.2A (V GS = -10V) RDS(ON) < 48m Ω (VGS = -10V) < 74m Ω (VGS = -4.5V) G2 SOIC-8 G1 S2 S1 n-channel p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current F Pulsed Drain Current TA=25°C Power Dissipation A -5.2 -4.2 35 -25 2 2 1.3 1.3 Avalanche Current IAR 13 11 A EAR 25 18 mJ -55 to 150 -55 to 150 °C PD TA=70°C B Repetitive avalanche energy 0.3mH B Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. V 6 ID IDM B ±20 Units V 7.4 TA=25°C TA=70°C Max p-channel -30 Symbol RθJA RθJL RθJA RθJL A W Device n-ch n-ch n-ch Typ 50 82 41 Max 62.5 110 50 Units °C/W °C/W °C/W p-ch p-ch p-ch 50 82 41 62.5 110 50 °C/W °C/W °C/W www.aosmd.com AO4619 N-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 35 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7.4A Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 3 V A 24 VGS=4.5V, ID=6A 29 36 VDS=5V, ID=7.4A 24 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance nA 34 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance 1.62 100 19 Forward Transconductance 0.74 621 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=7.4A µA 5 27 TJ=125°C VSD Crss V TJ=55°C gFS Units 1 Zero Gate Voltage Drain Current Coss Max 30 VDS=24V, VGS=0V IDSS IS Typ mΩ mΩ S 1 V 2.5 A 820 pF 118 pF 85 pF 0.8 1.5 Ω 11.3 nC 5.7 nC 2.1 nC Qgd Gate Drain Charge 3 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=2Ω, RGEN=3Ω 3.1 ns 15.1 ns 2.7 ns trr Body Diode Reverse Recovery Time IF=7.4A, dI/dt=100A/µs 15.5 Qrr Body Diode Reverse Recovery Charge IF=7.4A, dI/dt=100A/µs 7.1 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev 0: Oct 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4619 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 20 10V 6V 50 40 4.5V 12 ID(A) ID (A) VDS=5V 16 30 8 20 VGS=3.5V 125°C 4 10 0 25°C 0 0 1 2 3 4 5 1.5 VDS (Volts) Figure 1: On-Region Characteristics 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 40 Normalized On-Resistance 1.6 35 RDS(ON) (mΩ) 2 VGS=4.5V 30 25 20 VGS=10V 15 10 VGS=10V Id=7.4A 1.4 VGS=4.5V Id=6A 1.2 1 0.8 0.6 0 5 10 15 20 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 60 ID=7.4A 1.0E+00 1.0E-01 40 125°C IS (A) RDS(ON) (mΩ) 50 125°C 1.0E-02 30 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT 1.0E-03 AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY AR 20 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1.0E-04 25°CNOTICE. FUNCTIONS AND RELIABILITY WITHOUT 10 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 VGS (Volts) V (Volts) SD Figure 5: On-Resistance vs. Gate-Source Figure 6: Body-Diode Characteristics Voltage Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4619 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 800 VDS=15V ID=7.4A Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 600 400 Coss 200 Crss 0 0 2 4 6 8 10 12 0 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 100 25 30 100 1000 50 TJ(Max)=150°C TA=25°C 10µs 10 40 100µs RDS(ON) limited 1 0.1 1ms 10ms 100m 1s D TJ(Max)=150°C TA=25°C Power (W) -ID (Amps) 20 VDS (Volts) Figure 8: Capacitance Characteristics 10s 30 20 10 0.01 0.1 1 10 100 0 0.0001 -VDS (Volts) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PDDOES NOT ASSUME ANY LIABILITY AR COMPONENTS 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4619 P-cahnnel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 -5 Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -25 ±100 nA -3 V 38 48 55 69 VGS=-4.5V, I D=-4A 59 74 VDS=-5V, ID=-5.2A 11 TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge µA -1.88 VGS=-10V, I D=-5.2A Coss Units V TJ=55°C IGSS IS Max VDS=-24V, VGS=0V VGS(th) RDS(ON) Typ A VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, I D=-5.2A mΩ S -0.77 680 mΩ -1 V -2.5 A 816 pF 115 pF 86 pF 8 12 Ω 12.7 nC 6.4 nC 2 nC Qgd Gate Drain Charge 4 nC tD(on) Turn-On DelayTime 7.7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω 6.8 ns 20 ns 10 ns Body Diode Reverse Recovery Time IF=-5.2A, dI/dt=100A/µs 22 Body Diode Reverse Recovery Charge IF=-5.2A, dI/dt=100A/µs 15 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev 0: Oct 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4619 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 40 -10V 35 -8V VDS=-5V -5V 8 25 -4.5V 20 -4V 6 -ID(A) -ID (A) 30 4 15 VGS=-3.5V 10 125°C 2 25°C 5 0 0 0 1 2 3 4 5 0 1 -VDS (Volts) Figure 1: On-Region Characteristics 4 5 Normalized On-Resistance 1.6 80 RDS(ON) (mΩ) 3 -VGS(Volts) Figure 2: Transfer Characteristics 100 VGS=-4.5V 60 VGS=-10V 40 20 0 2 IF6=-6.5A, dI/dt=100A/µs 8 10 4 VGS=-10V ID=-5.2A 1.4 VGS=-4.5V ID=-4A 1.2 1.0 0.8 0.6 -50 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 160 ID=-5.2A 140 1E+00 120 1E-01 100 1E-02 -IS (A) RDS(ON) (mΩ) 2 125°C 1E-03 80 125°C APPLICATIONS OR USES AS CRITICAL THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. 1E-04 60 25°C OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-05 40 AND RELIABILITY WITHOUT NOTICE. FUNCTIONS 25°C 1E-06 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4619 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 Capacitance (pF) -VGS (Volts) 1000 VDS=-15V ID=-5.2A 8 6 4 2 Ciss 800 600 400 Coss 200 0 0 3 6 9 12 Crss 15 0 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 40 100µs 1ms 10ms 1 TJ(Max)=150°C TA=25°C 0.1 0.1 1s 10s 0.0001 -VDS (Volts) ZθJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 0 dI/dt=100A/µs IF=-6.5A, 10 100 1 TJ(Max)=150°C TA=25°C 10 100ms DC 30 30 Power (W) RDS(ON) limited 10 25 -VDS (Volts) Figure 8: Capacitance Characteristics 100 -ID (Amps) 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com