AO4414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4414 is Pb-free (meets ROHS & Sony 259 specifications). AO4414L is a Green Product ordering option. AO4414 and AO4414L are electrically identical. VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 26mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V 50 3 W 2.1 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 7.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 8.5 TA=25°C Power Dissipation Maximum 30 RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W AO4414 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 On state drain current VGS=4.5V, VDS=5V 20 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8.5A TJ=125°C VGS=4.5V, ID=5A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=5A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 1 Units V 5 VGS(th) Coss 0.004 TJ=55°C ID(ON) IS Max 30 VDS=24V, VGS=0V IDSS Typ 10 1.9 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=8.5A 100 nA 3 V A 20 26 29.2 38 31 40 mΩ mΩ 17 0.76 680 VGS=0V, VDS=15V, f=1MHz µA S 1 V 4.3 A 820 pF 102 pF 77 pF 3 3.6 Ω 13.84 17 nC 6.74 8.1 1.84 nC nC Qgd Gate Drain Charge 3.32 tD(on) Turn-On DelayTime 4.5 6.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time nC ns VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 4.2 6.3 ns 20.1 30 ns 4.9 7.5 ns trr Body Diode Reverse Recovery Time IF=8.5A, dI/dt=100A/µs 17.2 Qrr Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 8.6 21 10 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 5: June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V 4.5V 25 5V 12 ID(A) ID (A) 20 VDS=5V 16 4V 6V 15 3.5V 8 10 125°C VGS=3V 5 25°C 4 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 45 1.6 Normalized On-Resistance VGS=10V 40 RDS(ON) (mΩ) 2.5 VGS=4.5V 35 30 25 20 VGS=10V 1.4 VGS=4.5V 1.2 1 15 0 5 10 15 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 60 1.0E+00 50 ID=5A 1.0E-01 40 IS (A) RDS(ON) (mΩ) 25 125°C 125°C 1.0E-02 25°CAS CRITICAL THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES 30 1.0E-03 25°CARE NOT AUTHORIZED. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 20 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=15V ID=8.5A 800 Ciss Capacitance (pF) VGS (Volts) 8 6 4 600 400 Coss 2 200 0 0 0 2 4 6 8 10 12 14 Crss 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 50 RDS(ON) limited 100µs 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C DC 1 10 100 20 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=40°C/W 30 30 0 0.001 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 25 10 10s 0.1 0.1 20 TJ(Max)=150°C TA=25°C 40 10µs 1ms 10.0 Power (W) ID (Amps) 15 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS NOT ASSUME ANY LIABILITY ARISING 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000