AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description Features Features The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications). VVDS (V)==30V 30V DS(V) IDID==11A 5.7A (V (VGS 10V) GS==10V) RRDS(ON) 14.5mΩ(V (VGS 10V) DS(ON)<<26.5mΩ GS==10V) RRDS(ON) < < 32mΩ 18mΩ (V (V = = 4.5V) 4.5V) DS(ON) GS GS RDS(ON) < 48mΩ (VGS = 2.5V) Rg,Ciss,Coss,Crss Tested TO-236 (SOT-23) Top View D G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF TA=25°C TA=70°C ID IDM TA=25°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±12 V A 1.4 W 0.9 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 4.7 25 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 5.7 Pulsed Drain Current B Power Dissipation Maximum 30 RθJA RθJL Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W www.aosmd.com AO3400A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 0.7 VGS=4.5V, VDS=5V 25 TJ=125°C VGS=10V, ID=5.7A Static Drain-Source On-Resistance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd 32 VGS=2.5V, ID=3A 34 48 VDS=5V, ID=5.7A 26 Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 0.72 900 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=5.7A Gate Drain Charge tD(on) A 25.4 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance V VGS=4.5V, ID=5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance 1.5 38 VSD Crss nA 26.5 Forward Transconductance Coss 1 uA 100 31 gFS IS 5 22 TJ=125°C Units V 1 Zero Gate Voltage Drain Current RDS(ON) Max 30 IDSS ID(ON) Typ mΩ S 1.0 V 2.0 A 1100 pF 88 pF 65 pF 0.95 1.5 Ω 10 13 nC 1.8 nC 3.75 nC 3.2 ns VGS=10V, VDS=15V, RL=2.6Ω, RGEN=3Ω 3.5 ns 21.5 ns 2.7 ns IF=5.7A, dI/dt=100A/us 16.8 trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=5.7A, dI/dt=100A/us 20 8 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. 8.5 C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. 0.0 D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. 40 A E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA #DIV/0! curve provides a single pulse rating. F: The current rating is based on the t ≤ 10s thermal resistance rating. Rev0: Apr. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3400A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10V 35 20 4.5V 30 25 12 20 2.5V 15 8 VGS=10V, ID=8.5A 10 VGS=2.5V, ID=5A 0 1 V3DS=5V, ID4=11A 2 0 5 0 0.5 VDS (Volts) Maximum Body-Diode Continuous Current Figure 1: On-Region Characteristics Normalized On-Resistance RDS(ON) (mΩ) 50 45 VGS=2.5V 40 1.5 VGS=10V, VDS=15V, ID=8.5A 35 30 VGS=4.5V 1.2 VGS=10V, VDS=15V, RL=1.8Ω, 0.9 RGEN=3Ω 25 20 VGS=10V 15 0 5 10 0.6 15 20 -50 IF=8.5A, dI/dt=100A/µs -25 ID (A) IFDrain =8.5A, dI/dt=100A/µs Figure 3: On-Resistance vs. Current and Gate Voltage 25°C 24 36.0 29.0 34.5 45 26 1.5 0.72 2 2.5 1 3 0 25 10 1.8 3.75 3.2 3.5 21.5 2.7 50 75 16.8 VGS=10V ID=5.7A 100 125 150 175 Temperature (°C) 8 Figure 4: On-Resistance vs. Junction Temperature 8.5 1.0E+01 60 0.0 ID=5.7A 1.0E+00 40 50 #DIV/0! 1.0E-01 125°C IS (A) 40 20 30.0 23 900 1100 88 65 ID=5A 0.95 1.5 VGS=4.5V 1.8 55 RDS(ON) (mΩ) 1 1 VGS(Volts) 4.5 Figure 2: Transfer Characteristics 60 Qg 25 VGS=2V 0 1 uA 5 100 nA 1.5 125°C 4 VGS=4.5V, ID=8.5A 5 0.7 ID(A) ID (A) VDS=5V 16 3V A 125°C 1.0E-02 1.0E-03 30 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-04 COMPONENTS IN LIFE SUPPORT DEVICES25°C OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 20 1.0E-05 THE RIGHT TO IMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 10 0 2 4 6 8 1.0E-06 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO3400A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 1200 Ciss Capacitance (pF) VGS (Volts) 1500 VDS=15V ID=5.7A 3 2 VGS=10V, ID=8.5A 900 0.7 600 1 VGS=2.5V, ID=5A 0 0 2 4 6 VDS8=5V, ID10 =11A 0 Qg (nC) Figure 7: Gate-Charge Characteristics Maximum Body-Diode Continuous Current 100.00 VGS=10V, VDS=15V, ID=8.5A 1.00 1ms 10ms 0.10 0.01 0.01 0.1 10s 1 100 IF=8.5A,10dI/dt=100A/µs VDS (Volts) I =8.5A, dI/dt=100A/µs F Biased Safe Figure 9: Maximum Forward Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 20 VGSDC =10V, VDS100ms =15V, RL=1.8Ω, 10 RGEN=3Ω TJ(Max)=150°C TA=25°C D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W 0 0.001 45 26 10 15 VDS0.72 (Volts) 900 88 65 0.95 30 100µs 24 36 29 20 25 1 Figure 8: Capacitance Characteristics 4.5 10µs Power (W) ID (Amps) 10.00 Qg 5 40 RDS(ON) limited 20 30 23 Coss 34.5 0 12 1 Crss 300 VGS=4.5V, ID=8.5A 25 1 uA 5 100 nA 1.5 0.01 30 1100 TJ(Max)=150°C 1.5 TA=25°C 10 1.8 3.75 3.2 3.5 21.5 2.7 0.1 1 16.8 Pulse Width (s) 10 100 Figure 10: Single Pulse8Power Rating Junction-toAmbient (Note E) 8.5 0.0 In descending order 400.1, 0.05, 0.02, 0.01, single pulse A D=0.5, 0.3, #DIV/0! 1 THIS PRODUCT OR USES AS CRITICAL D 0.1 HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.PAPPLICATIONS TonIMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO Single Pulse T FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com