AO4427 30V P-Channel MOSFET General Description Product Summary The AO4427 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. VDS (V) = -30V ID = -12.5 A (VGS = -20V) RDS(ON) < 12mΩ (VGS = -20V) RDS(ON) < 14mΩ (VGS = -10V) ESD Rating: 2KV HBM 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current AF TA=70°C TA=25°C Power Dissipation Junction and Storage Temperature Range Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. ±25 V ID -10.5 IDM -60 W 2.1 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 3 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Units V -12.5 Pulsed Drain Current B A Maximum -30 RθJA RθJL Typ 28 54 21 °C Max 40 75 30 Units °C/W °C/W °C/W www.aosmd.com AO4427 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -30 IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -60 TJ=55°C -5 VGS=-20V, ID=-12.5A TJ=125°C IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge 12 14 2330 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-12.5A 3.4 mΩ mΩ mΩ S -1 V -4.2 A 2900 pF 480 pF 320 448 pF 6.8 10 Ω 41 52 Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=-12.5A, dI/dt=100A/µs 28 Qrr Body Diode Reverse Recovery Charge IF=-12.5A, dI/dt=100A/µs 20 VGS=-10V, VDS=-15V, RL=1.2Ω, RGEN=3Ω V 15 24 VDS=-5V, ID=-12.5A µA -3 9.4 32 Diode Forward Voltage ±10 12.2 11.5 Forward Transconductance µA A VGS=-10V, ID=-10A VSD Coss -2.5 VGS=-4.5V, ID=-5A gFS Units -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ nC 10 nC 12 nC 12.8 ns 10.3 ns 49.5 ns 29 ns 35 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev8: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4427 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 30 -6V -10V VDS=-5V -5V 20 20 15 -ID(A) -ID (A) -4.5V 125°C 10 10 VGS=-4V 5 0 0 0 1 2 3 4 -VDS (Volts) Figure 1: On-Region Characteristics 5 12 1 1.5 2 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 2: Transfer Characteristics 5 Normalized On-Resistance 1.6 11 RDS(ON) (mΩ ) 25°C VGS=-10V ID=-10A 1.4 VGS=-10V VGS=-10V, VDS=-15V, 10 ID=-12.5A 1.2 9 VGS=-20V 8 VGS=-20V ID=-12.5A 1 0.8 0 5 10 15 20 25 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 ID=-12.5A 1.0E+00 40 -IS (A) RDS(ON) (mΩ ) 1.0E-01 125°C 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-02 COMPONENTS IN LIFE SUPPORT DEVICES 125°COR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF 1.0E-03 THE RIGHT TO IMPROVE PRODUCT DESIGN, 20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-04 25°C 10 25°C 1.0E-05 0 1.0E-06 4 5 6 7 8 9 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4427 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=-15V ID=-12.5A Capacitance (pF) -VGS (Volts) Ciss 2500 8 6 4 2 2000 1500 Coss 1000 Crss 500 0 0 0 5 10 15 20 25 30 35 40 -Qg (nC) Figure 7: Gate-Charge Characteristics 45 0 100.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 40 RDS(ON) limited 100µs TJ(Max)=150°C TA=25°C 10µs 30 -ID (Amps) V 10ms GS=-10V, VDS=-15V, 0.1s 1.0 1s DC 0 0.001 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 20 10 0.1 10 ID=-12.5A 10s TJ(Max)=150°C TA=25°C 0.1 Power (W) 1ms 10.0 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, PD FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000 www.aosmd.com