AO4812A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4812A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. AO4812A is Pb-free (meets ROHS & Sony 259 specifications). AO4812AL is a Green Product ordering option. AO4812A and AO4812AL are electrically identical. VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 D2 G2 S1 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V ID 5.8 IDM 30 W 1.44 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 2 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 6.9 TA=70°C TA=25°C Power Dissipation Maximum 30 RθJA RθJL Typ 50 82 41 °C Max 62.5 110 50 Units °C/W °C/W °C/W AO4812A Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 On state drain current VGS=4.5V, VDS=5V 20 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6.9A TJ=125°C VGS=4.5V, ID=5A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=6.9A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 1 Units V 5 VGS(th) Coss 0.004 TJ=55°C ID(ON) IS Max 30 VDS=24V, VGS=0V IDSS Typ 10 1.8 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=6.9A 100 nA 3 V A 19 28 24 30 28 42 mΩ mΩ 24 0.77 621 VGS=0V, VDS=15V, f=1MHz µA S 1 V 4.3 A 820 pF 118 pF 85 pF 0.8 1.5 Ω 11.3 17 nC 5.7 8 nC 2.1 Qgd Gate Drain Charge 3 tD(on) Turn-On DelayTime 4.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time nC nC 6.5 ns VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω 3.1 5 ns 15.1 23 ns 2.7 5 ns trr Body Diode Reverse Recovery Time IF=6.9A, dI/dt=100A/µs 15.5 20 Qrr Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs 7.1 10 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0: December 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4812A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 5V 10V VDS=5V 25 20 6V 12 4V ID(A) ID (A) 16 4.5V 15 8 10 125°C 3.5V 4 5 25°C VGS=3V 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 35 4.5 VGS=10V Normalized On-Resistance 30 RDS(ON) (mΩ) 4 1.6 VGS=4.5V ID=6.9A 1.4 VGS=10V, VDS=15V, ID=7.4A 25 VGS=4.5V 1.2 1 VGS=10V, VDS=15V, RL=2.0Ω, RGEN=3Ω VGS=10V 20 15 0 5 10 IF=7.4A, dI/dt=100A/µs 15 0.8 0.6 20 IF=7.4A, dI/dt=100A/µs -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 60 ID=6.9A 1.0E+00 50 1.0E-01 40 IS (A) RDS(ON) (mΩ) 3.5 VGS(Volts) Figure 2: Transfer Characteristics 125°C 125°C 1.0E-02 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 30 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 20 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4812A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=15V ID=6.9A 800 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 600 400 2 200 0 0 0 2 4 6 8 10 12 Coss Crss 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 50 RDS(ON) limited 40 10µs 1ms VGS=10V, VDS=15V, ID=7.4A ID (Amps) 10.0 10ms 0.1s VGS=10V, 1s 1.0 TJ(Max)=150°C TA=25°C 30 TJ(Max)=150°C TA=25°C 100µs Power (W) 100.0 10 30 20 VDS=15V, RL=2.0Ω, RGEN=3Ω 10s 10 DC 0.1 0.1 1 0 0.001 IF=7.4A, dI/dt=100A/µs 10 IF=7.4A, VDS (Volts) 100 dI/dt=100A/µs ZθJA Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS NOT ASSUME ANY LIABILITY ARISING 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000