Rev 3: Nov 2004 AO4405, AO4405L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. AO4405L( Green Product ) is offered in a lead-free package. VDS (V) = -30V ID = -6.0A RDS(ON) < 50mΩ (VGS = -10V) RDS(ON) < 85mΩ (VGS = -4.5V) D SOIC-8 Top View S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A TA=25°C Junction and Storage Temperature Range 3 TJ, TSTG t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A W 2.1 -55 to 150 Symbol A V -30 PD TA=70°C A ±20 -5.1 ID IDM TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Units V -6.0 TA=70°C Pulsed Drain Current B Power Dissipation A Maximum -30 RθJA RθJL Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W AO4405, AO4405L Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 -5 Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 VGS=-10V, I D=6A TJ=125°C Static Drain-Source On-Resistance VGS=-4.5V, I D=-4A gFS Forward Transconductance VSD IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=-5V, ID=-6A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Units V TJ=55°C IGSS IS Max VDS=-24V, VGS=0V VGS(th) RDS(ON) Typ 6 ±100 nA -1.8 -3 V 40 50 55 70 65 85 A 9.5 VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, I D=-6A mΩ mΩ S -0.78 700 VGS=0V, VDS=-15V, f=1MHz µA -1 V -4.2 A 840 pF 112 pF 78 pF 10 15 Ω 14.7 18 nC 7.6 nC 2 nC Qgs Gate Source Charge Qgd Gate Drain Charge 3.8 nC tD(on) Turn-On DelayTime 8.6 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=-10V, VDS=-15V, RL=2.5Ω, RGEN=3Ω 5 ns 28.2 ns 13.5 Body Diode Reverse Recovery Time IF=-6A, dI/dt=100A/µs 24 Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs 14.7 ns 30 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4405, AO4405L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -10V 10 -6V -5V -4.5V -4V 6 10 -ID(A) -ID (A) VDS=-5V 8 15 -3.5V 5 VGS=-3V 0 0.00 2.00 3.00 4.00 125°C 2 -2.5V 1.00 4 25°C 0 5.00 0 1 -VDS (Volts) Figure 1: On-Region Characteristics 100 Normalized On-Resistance RDS(ON) (mΩ) 3 4 1.6 80 VGS=-4.5V 60 VGS=-10V 40 20 1.4 VGS=-10V VGS=-4.5V 1.2 1 ID=-5A 0.8 0 2 4 6 8 10 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 1E+01 140 1E+00 ID=-5A 120 1E-01 100 1E-02 -IS (A) RDS(ON) (mΩ) 2 -VGS(Volts) Figure 2: Transfer Characteristics 125°C 125°C 1E-03 MARKET. APPLICATIONS OR USES AS CRITICAL 80 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER 25°C COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 60 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-05 25°C FUNCTIONS WITHOUT NOTICE. 40 AND RELIABILITY 1E-06 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4405, AO4405L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=-15V ID=-6A 9 1000 Capacitance (pF) 8 -VGS (Volts) 7 6 5 4 3 2 Ciss 800 600 400 Coss 200 1 0 Crss 0 0 2 4 6 8 10 12 14 16 0 -Qg (nC) Figure 7: Gate-Charge Characteristics TJ(Max)=150°C TA=25°C 20 25 30 TJ(Max)=150°C TA=25°C 10µs 30 100µs 1ms 0.1s 10ms 1 15 40 RDS(ON) limited 10 10 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100 5 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 -VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000