AO4415 30V P-Channel MOSFET General Description Product Summary The AO4415 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = -30V ID = -8 A (VGS = -20V) RDS(ON) < 26mΩ (VGS = -20V) RDS(ON) < 35mΩ (VGS = -10V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A TA=70°C TA=25°C Power Dissipation Junction and Storage Temperature Range Maximum Junction-to-Lead C ±25 V ID -6.6 IDM -40 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 2.1 TJ, TSTG t ≤ 10s Steady-State Steady-State A 3 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V -8 Pulsed Drain Current B A Maximum -30 RθJA RθJL Typ 24 54 21 °C Max 40 75 30 Units °C/W °C/W °C/W AO4415 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Typ Max V VDS=-24V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V 40 TJ=55°C VGS=-20V, ID=-8A TJ=125°C Units -5 µA ±100 nA -2.8 -3.5 V 21.5 26 29 35 28.5 35 A mΩ RDS(ON) Static Drain-Source On-Resistance VGS=-6V, ID=-5A 41 mΩ gFS Forward Transconductance VDS=-5V, ID=-8A 11.5 S VSD Diode Forward Voltage IS=-1A,VGS=0V -0.76 IS Maximum Body-Diode Continuous Current VGS=-10V, ID=-8A DYNAMIC PARAMETERS Ciss Input Capacitance Coss 893 VGS=0V, VDS=-15V, f=1MHz Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qgs Gate Source Charge Qgd Gate Drain Charge -1 V -4.2 A 1100 204 VGS=-10V, VDS=-15V, ID=-8A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω pF 4 6 Ω 16.6 21 nC 3.2 nC 5.2 nC 10.5 ns 7.3 ns 15.1 ns 8.6 IF=-8A, dI/dt=100A/µs pF pF 151 VGS=0V, VDS=0V, f=1MHz mΩ 21 ns 26 10.7 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in SOA curve provides a single pulse rating. 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4415 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 30 -10V VDS=-5V 25 -7V 20 -6V 15 15 -ID(A) -ID (A) 20 -5V 10 10 125°C -4.5V 5 5 VGS=-4V 25°C 0 0 0 1 2 3 4 5 2.5 -VDS (Volts) Fig 1: On-Region Characteristics 4 4.5 5 5.5 6 6.5 1.60 ID=-8A Normalized On-Resistance 55 VGS=-6V 50 45 RDS(ON) (mΩ ) 3.5 -VGS(Volts) Figure 2: Transfer Characteristics 60 40 35 VGS=-10V 30 25 20 VGS=-20V 15 VGS=-10V 1.40 VGS=-20V 1.20 1.00 0.80 10 0 5 10 15 20 0 25 100 90 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 ID=-8A 1.0E+00 80 70 1.0E-01 125°C -IS (A) RDS(ON) (mΩ ) 3 1.0E-02 60 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER 1.0E-03 MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 50 1.0E-04 THE RIGHT TO IMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES 40 AND RELIABILITY WITHOUT NOTICE. FUNCTIONS 25°C 125°C 1.0E-05 30 25°C 1.0E-06 20 0.0 0.2 0.4 0.6 0.8 1.0 4 8 12 16 20 -VSD (Volts) -VGS (Volts) Figure 6: Body-Diode Characteristics Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. AO4415 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=-15V ID=-8A 1250 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 2 1000 750 500 Coss 250 Crss 0 0 0 4 8 12 16 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 TJ(Max)=150°C TA=25°C 10µs 30 RDS(ON) limited 100µs 0.1s Power (W) -ID (Amps) 15 40 TJ(Max)=150°C, T A=25°C 1ms 10ms 1.0 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 5 20 1s 10 10s DC 0.1 0.1 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL P 0.1 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DDOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd.