AO4815 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4815 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4815 is Pb-free (meets ROHS & Sony 259 specifications). AO4815L is a Green Product ordering option. AO4815 and AO4815L are electrically identical. VDS (V) = -30V ID = -8A (VGS = -20V) RDS(ON) < 18mΩ (VGS = -20V) RDS(ON) < 20mΩ (VGS = -10V) ESD Rating: 2KV HBM D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Pulsed Drain Current TA=25°C ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Maximum -30 Units V ±25 V -40 2 W 1.44 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -6.9 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C S2 -8 TA=25°C Power Dissipation A G2 S1 SOIC-8 Continuous Drain Current A D2 RθJA RθJL Typ 50 73 31 Max 62.5 110 40 Units °C/W °C/W °C/W AO4815 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Gate Threshold Voltage On state drain current VGS(th) ID(ON) RDS(ON) gFS VSD IS Conditions Min ID=-250µA, VGS=0V VDS=-24V, VGS=0V -30 VDS=0V, VGS=±25V VDS=VGS ID=-250µA -1 VGS=-10V, VDS=-5V VGS=-20V, ID=-8A Static Drain-Source On-Resistance TJ=125°C Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Rg Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time V -2.8 ±1 -3 14.1 19 16.2 18 24 20 µA V VGS=0V, VDS=0V, f=1MHz 320 6.8 VGS=-10V, VDS=-15V, ID=-8A 41 10 VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω 12 13 12 51 30.5 28 mΩ mΩ mΩ 37 15 2330 480 IF=-8A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs µA A VGS=0V, VDS=-15V, f=1MHz Body Diode Reverse Recovery Time Units -40 VGS=-10V, ID=-8A VGS=-4.5V, ID=-5A VDS=-5V, ID=-8A Output Capacitance Max -1 -5 TJ=55°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Typ S -1 -2.6 V A 2900 pF pF 10 52 pF Ω nC nC nC ns ns ns ns 35 20.5 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 2: Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4815 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 30 -6V -10V VDS=-5V -5V 20 20 15 -ID(A) -ID (A) -4.5V 125°C 10 10 VGS=-4V 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 5 2 18 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 2: Transfer Characteristics 5 Normalized On-Resistance 1.6 VGS=-10V 17 RDS(ON) (mΩ) 25°C 5 16 15 VGS=-20V 14 1.4 VGS=-10V ID=-8A 1.2 VGS=-20V ID=-8A 1 0.8 0 5 10 15 20 25 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 ID=-8A 1.0E+00 50 RDS(ON) (mΩ) 1.0E-01 125°C -IS (A) 40 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-02 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF AOS RESERVES 1.0E-03 THE RIGHT TO IMPROVE PRODUCT DESIGN, 125°C 30 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-04 20 25°C 25°C 1.0E-05 10 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4815 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=-15V ID=-8A 6 4 2 2000 1500 Coss 1000 0 0 5 10 15 20 25 30 35 40 -Qg (nC) Figure 7: Gate-Charge Characteristics 45 0 Power (W) 10ms 1.0 1s 30 TJ(Max)=150°C TA=25°C 20 10 10s TJ(Max)=150°C TA=25°C DC 0 0.001 0.1 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 0.1s 10 10 10µs 100µs 1ms 0.1 5 40 RDS(ON) limited 10.0 -ID (Amps) Crss 500 0 100.0 Ciss 2500 Capacitance (pF) -VGS (Volts) 8 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, PD FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000