AO4800A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. Standard Product AO4800A is Pb-free (meets ROHS & Sony 259 specifications). AO4800AL is a Green Product ordering option. AO4800A and AO4800AL are electrically identical. VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) S2 G2 S1 G1 1 2 3 4 8 7 6 5 G2 G1 SOIC-8 Gate-Source Voltage Maximum 30 Units V VGS ±12 V ID 5.8 IDM 40 TA=25°C Continuous Drain Current A 6.9 TA=70°C B TA=25°C Power Dissipation S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Pulsed Drain Current D2 D1 D2 D2 D1 D1 Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. 1.9 PD TA=70°C W 1.2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A RθJA RθJL Typ 55 90 40 °C Max 62.5 110 48 Units °C/W °C/W °C/W AO4800A Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Min Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V 0.002 Gate-Body leakage current VDS=0V, VGS= ±12V VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=4.5V, V DS=5V 40 VGS=10V, I D=6.9A Reverse Transfer Capacitance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge A VGS=4.5V, I D=6A 23 32 mΩ VGS=2.5V, I D=5A 34 50 mΩ VDS=5V, ID=5A DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance V 27 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Rg nA 1.5 40 Forward Transconductance Crss 100 20 gFS Output Capacitance 1 µA 25 TJ=125°C VSD Coss 1 5 Gate Threshold Voltage IS Units V TJ=55°C VGS(th) Static Drain-Source On-Resistance Max 30 IGSS RDS(ON) Typ 10 26 S 0.71 900 mΩ 1 V 4.5 A 1100 pF VGS=0V, VDS=15V, f=1MHz 88 VGS=0V, VDS=0V, f=1MHz 0.95 1.5 Ω 10 12 nC VGS=4.5V, V DS=15V, I D=8.5A 1.8 nC pF 65 pF Qgd Gate Drain Charge 3.75 nC tD(on) Turn-On DelayTime 3.2 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=1.8Ω, RGEN=6Ω 3.5 ns 21.5 ns 16.8 20 8 12 2.7 trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs ns ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0 : Jan 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4800A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 20 10V 50 40 3V 12 ID(A) ID (A) VDS=5V 16 4.5V 30 2.5V 125°C 8 20 25°C 10 4 VGS=2V 0 0 0 1 2 3 4 5 0 0.5 VDS (Volts) Fig 1: On-Region Characteristics 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 60 RDS(ON) (mΩ) Normalized On-Resistance 1.7 50 VGS=2.5V 40 30 VGS=4.5V 20 VGS=10V 10 VGS=4.5V 1.5 VGS=10V 1.3 VGS=2.5V 1.1 VGS=2.5V 0.9 0.7 VGS=4.5 0.5 0 5 10 15 20 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 1.0E+01 90 1.0E+00 80 70 -25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 ID=6.9A 1.0E-01 125°C 60 IS (A) RDS(ON) (mΩ) VGS=10V 50 125°C 1.0E-02 1.0E-03 40 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25°C 1.0E-04 COMPONENTS IN25°C LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 30 1.0E-05 THE RIGHT TO IMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES 20 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. VSD (Volts) Figure 6: Body-Diode Characteristics AO4800A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=15V ID=6.9A 1200 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 1000 800 600 400 Crss 1 Coss 200 0 0 0 2 4 6 8 10 12 0 Qg (nC) Figure 7: Gate-Charge Characteristics Power (W) ID (Amps) 20 25 30 TJ(Max)=150°C TA=25°C 40 10.0 10µs 30 20 1ms 10 10ms DC 10s 1s 0.1 0.1 1 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance 15 50 TJ(Max)=150°C TA=25°C 1.0 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited 5 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT OR USES AS CRITICAL D 0.1 HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.PAPPLICATIONS COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING TonIMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO T Single Pulse FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd.