AO6706 30V N-Channel MOSFET General Description Product Summary VDS (V) = 30V ID = 3.6A (VGS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 20V IF = 1A VF<[email protected] The AO6706 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. TSOP6 Top View Bottom View Top View D K A 1 6 K S 2 5 N/C G 3 4 D G S A Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A TA=70°C Pulsed Drain Current B IDM VKA Schottky reverse voltage TA=25°C Continuous Forward Current A Pulsed Forward Current TA=70°C B TA=25°C TA=70°C TJ, TSTG Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A C Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A C Alpha & Omega Semiconductor, Ltd. Steady-State Steady-State t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL RθJA RθJL Units V ±12 3.3 V 2.6 A 10 IF PD Schottky 30 IFM Power Dissipation Maximum Junction-to-Lead ID MOSFET 20 2 V 1 A 1.15 10 0.92 0.7 0.59 -55 to 150 -55 to 150 °C Typ Max Units 80.3 110 117 43 150 80 109.4 135 136.5 58.5 175 80 W °C/W °C/W AO6706 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ V 1 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 10 VGS=10V, ID=3.3A TJ=125°C 1.4 65 53 75 mΩ 160 mΩ VGS=2.5V, ID=1A 106 VDS=5V, ID=3.3A 11.7 VSD Diode Forward Voltage IS=1A,VGS=0V 0.81 IS Maximum Body-Diode Continuous Current Output Capacitance Reverse Transfer Capacitance Rg Gate resistance 226 Gate Source Charge mΩ S 1 V 2.5 A 270 pF 39 pF 29 pF VGS=0V, VDS=0V, f=1MHz 1.4 4 Ω 3 3.6 nC VGS=4.5V, VDS=15V, ID=3.3A 1.4 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs V 90 Forward Transconductance VGS=0V, VDS=15V, f=1MHz nA 1.8 44 gFS DYNAMIC PARAMETERS Input Capacitance Ciss 100 64 Static Drain-Source On-Resistance VGS=4.5V, ID=3.0A µA A RDS(ON) Crss Units 30 VDS=24V, VGS=0V IGSS Coss Max Qgd Gate Drain Charge 0.55 nC tD(on) Turn-On DelayTime 2.6 ns tr Turn-On Rise Time 3.2 ns tD(off) Turn-Off DelayTime 14.5 ns tf Turn-Off Fall Time trr Qrr VGS=10V, VDS=15V, RL=4.7Ω, RGEN=6Ω 2.1 IF=3.3A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3.3A, dI/dt=100A/µs SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm Maximum reverse leakage current CT IF=0.5A 10.2 ns 13 ns nC 0.5 V 3.8 0.39 VR=16V VR=16V, TJ=125°C 0.1 mA 20 Junction Capacitance VR=10V 34 trr Schottky Reverse Recovery Time IF=1A, dI/dt=100A/µs 5.2 Qrr Schottky Reverse Recovery Charge IF=1A, dI/dt=100A/µs 0.8 pF 10 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev3: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6706 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V 3.5V VDS=5V 8 12 4V 6V 3V 6 ID(A) ID (A) 9 4 6 VGS=2.5V 125°C 2 3 0 25°C 0 0 1 2V (Volts)3 4 DS Fig 1: On-Region Characteristics 5 200 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 270 1.8 VGS=4.5V ID=3.0A RDS(ON) (mΩ ) Normalized On-Resistance 175 1.6 150 VGS=2.5V 125 1.7 VGS=10V 3.6 I =3.3A D 1.4 100 1.2 VGS=4.5V 75 50 VGS=10V 25 0 VGS=2.5V ID=1A 1 0.8 0 2 4 6 3.5 8 10 13 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 1.0E+01 ID=3.3A 90 1.0E+00 125°C 1.0E-01 70 IS (A) RDS(ON) (mΩ ) 80 125°C 1.0E-02 60 25°C 25°C 1.0E-03 50 40 1.0E-04 30 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO6706 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 5 VDS=15V ID=3.3A 350 4 300 Capacitance (pF) Ciss VGS (Volts) 250 3 200 2 150 Coss Crss 100 1 50 0 0 0 1 2 Q (nC) 3 4 g Figure 7: Gate-Charge Characteristics 5 0 5 10 VDS (Volts) 15 20 25 Figure 8: Capacitance Characteristics 30 270 100.0 20 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 1.7 15 RDS(ON) limited 10µs 100µs 10 1ms 10ms 1.0 1s 3.6 Power (W) ID (Amps) 10.0 5 0.1s 10s DC 0 0.001 0.1 0.1 1 10 100 (Volts) Biased Safe VDS Figure 9: Maximum Forward Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 13 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000