AO6706 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS (V) = 30V ID = 3.6A (V GS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<[email protected] The AO6706 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6706 is Pb-free (meets ROHS & Sony 259 specifications). AO6706L is a Green Product ordering option. AO6706 and AO6706L are electrically identical. D K S A TSOP6 Top View A S G 1 6 2 5 3 4 K N/C D G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current A TA=70°C B IDM VKA Schottky reverse voltage TA=25°C Continuous Forward Current Pulsed Forward Current ID A TA=70°C B MOSFET TA=70°C Power Dissipation ±12 3.3 V 2.6 A 10 IF TJ, TSTG Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics Schottky Steady-State Steady-State Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient Maximum Junction-to-Lead C A Steady-State Alpha & Omega Semiconductor, Ltd. PD Steady-State Symbol RθJA RθJL RθJA RθJL Units V IFM TA=25°C Schottky 30 20 2 V 1 A 1.15 10 0.92 0.7 0.59 -55 to 150 -55 to 150 °C Typ Max Units 80.3 110 117 43 150 80 109.4 135 136.5 58.5 175 80 W °C/W °C/W AO6706 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 10 100 VGS=10V, ID=3.3A TJ=125°C Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge 44 65 64 90 mΩ 75 mΩ 160 mΩ VDS=5V, ID=3.3A 11.7 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance V A 53 Forward Transconductance Crss nA 106 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance 1.8 VGS=4.5V, ID=3.0A gFS Coss 1.4 µA VGS=2.5V, ID=1A VSD IS Units V 1 VGS(th) Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IGSS RDS(ON) Typ 0.81 226 VGS=0V, VDS=15V, f=1MHz S 1 V 2.5 A 270 pF 39 pF 29 pF Ω VGS=0V, VDS=0V, f=1MHz 1.4 1.7 3 3.6 VGS=4.5V, VDS=15V, ID=3.3A 1.4 nC nC Qgd Gate Drain Charge 0.55 nC tD(on) Turn-On DelayTime 2.6 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=10V, VDS=15V, RL=4.7Ω, RGEN=6Ω 3.2 ns 14.5 ns Body Diode Reverse Recovery Time IF=3.3A, dI/dt=100A/µs 10.2 Body Diode Reverse Recovery Charge IF=3.3A, dI/dt=100A/µs 3.8 IF=0.5A 0.39 SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm Maximum reverse leakage current CT Junction Capacitance trr Qrr 2.1 ns 13 ns nC 0.5 V 0.1 VR=16V VR=16V, TJ=125°C 20 Schottky Reverse Recovery Time VR=10V IF=1A, dI/dt=100A/µs 5.2 34 Schottky Reverse Recovery Charge IF=1A, dI/dt=100A/µs 0.8 mA pF 10 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6706 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V 3.5V 12 VDS=5V 8 4V 6V 3V 6 ID(A) ID (A) 9 4 6 VGS=2.5V 125°C 2 3 0 25°C 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 0 200 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 270 1.8 VGS=4.5V ID=3.0A RDS(ON) (mΩ) Normalized On-Resistance 175 150 VGS=2.5V 125 100 75 VGS=4.5V 50 VGS=10V 25 1.6 1.7 V =10V 3.6 I GS D=3.3A 1.4 1.2 VGS=2.5V ID=1A 1 0 0 2 4 6 8 3.5 13 0.8 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 100 ID=3.3A 90 1.0E+00 125°C 1.0E-01 70 IS (A) RDS(ON) (mΩ) 80 125°C 1.0E-02 60 25°C 25°C 50 1.0E-03 40 1.0E-04 30 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO6706 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 5 VDS=15V ID=3.3A 350 300 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 250 200 150 Coss Crss 100 1 50 0 0 0 1 2 3 4 5 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 270 100.0 20 TJ(Max)=150°C TA=25°C ID (Amps) 1ms 100µs Power (W) 15 RDS(ON) limited 10.0 TJ(Max)=150°C TA=25°C 1.7 10µs 10ms 1.0 1s 3.6 10 5 0.1s 10s DC 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 13 0 0.1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000