AO6700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO6700 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6700 is Pb-free (meets ROHS & Sony 259 specifications). AO6700L is a Green Product ordering option. AO6700 and AO6700L are electrically identical. VDS (V) = 20V ID = 4.1A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 65mΩ (VGS = 2.5V) RDS(ON) < 95mΩ (VGS = 1.8V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<[email protected] D K S A TSOP6 Top View K S G A D D 1 6 2 5 3 4 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current A TA=70°C B IDM VKA Schottky reverse voltage TA=25°C Continuous Forward Current Pulsed Forward Current A TA=70°C B TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A C Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C A Steady-State Steady-State t ≤ 10s Steady-State Steady-State TJ, TSTG Symbol RθJA RθJL RθJA RθJL Units V ±8 4.1 V 3.3 A 10 IF PD Schottky 20 IFM TA=25°C Maximum Junction-to-Lead ID MOSFET 20 1.5 V 1 A 1.39 10 0.78 0.89 0.5 -55 to 150 -55 to 150 °C Typ Max Units 70 90 102 51 130 80 129 160 158 52 200 80 W °C/W °C/W AO6700 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Conditions Min ID=250µA, VGS=0V 20 5 Gate-Body leakage current VDS=0V, VGS=±8V Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 10 nA 0.6 1 V 41.6 50 63 80 VGS=2.5V, ID=3.6A 54 65 mΩ VGS=1.8V, ID=3A 74 95 mΩ VDS=5V, ID=4.1A 10.5 1 V 1.8 A 550 pF TJ=125°C gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A 0.8 449 VGS=0V, VDS=10V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge µA 100 VGS=4.5V, ID=4.1A IS Units V TJ=55°C Static Drain-Source On-Resistance Max 1 VDS=16V, VGS=0V VGS(th) RDS(ON) Typ mΩ S 74 pF 51.6 pF VGS=0V, VDS=0V, f=1MHz 4.9 6 Ω 5.9 7.2 nC VGS=4.5V, VDS=10V, ID=4.1A 0.36 nC nC Qgd Gate Drain Charge 1.3 tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time 6 ns 32.7 ns 7.1 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=5V, VDS=10V, RL=2.35Ω, RGEN=0Ω trr Body Diode Reverse Recovery Time IF=4.1A, dI/dt=100A/µs 13 Qrr Body Diode Reverse Recovery Charge IF=4.1A, dI/dt=100A/µs 3.3 SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=0.5A 0.39 16 ns nC 0.5 V 0.02 VR=16V VR=16V, TJ=125°C Irm Maximum reverse leakage current CT Junction Capacitance trr Schottky Reverse Recovery Time VR=10V IF=1A, dI/dt=100A/µs 5.2 Qrr Schottky Reverse Recovery Charge IF=1A, dI/dt=100A/µs 0.8 20 34 mA pF 10 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 2 : Sept 2005 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6700 MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 16 VGS=5V VGS =2.0V 8 25°C 125°C 6 8 ID(A) ID(A) 12 VGS =1.5V 4 4 2 VGS =1.0V 0 0 0 1 2 3 4 5 0.0 0.5 VDS(Volts) Figure 1: On-Regions Characteristi 1.5 2.0 2.5 VGS(Volts) Figure 2: Transfer Characteristics cs 1.6 90 ID=4.1A Normalize ON-Resistance VGS =1.8V 80 RDS(ON)(mΩ) 1.0 70 VGS =2.5V 60 50 40 VGS =4.5V 1.4 VGS=1.8V VGS=2.5V 1.2 VGS=4.5V 1.0 30 0 2 4 6 8 0.8 10 0 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 90 1E+01 80 1E+00 ID=4.1A 125°C 1E-01 70 60 IS(A) RDS(ON)(mΩ) 25 125°C 1E-02 1E-03 50 40 25°C 1E-04 25°C 1E-05 30 0 2 4 6 8 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 VSD(Volts) Figure 6: Body-Diode Characteristics 1.0 AO6700 MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VDS=4.5V Capacitance (pF) VGS(Volts) 700 ID=4.1A 4 3 2 1 600 Ciss 500 400 Crss 300 200 Coss 100 0 0 0 1 2 3 0 4 10 15 20 12 100 RDS(ON) limited 10 ID(A) 1ms 0.1s 100µs 10ms 1s 1 Power (W) 10µs 10 8 6 4 10s TJ(Max) =150°C TA =25°C 2 DC 0.1 0 0.1 1 10 100 0.001 VDS(Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ZθJA Normalized Transient Thermal Resistance 5 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics D=Ton/T TJ,PK=TA+PDM.Z θJA.R θJA RθJA=90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (S) Figure 11: Normalized Maximum Transient Thermal Impedence Alpha & Omega Semiconductor, Ltd. T 100 1000