AO6401A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO6401A is Pb-free (meets ROHS & Sony 259 specifications). VDS = -30V ID = -5.0A RDS(ON) < 44mΩ RDS(ON) < 55mΩ RDS(ON) < 82mΩ (VGS = -10V) (VGS = -10V) (VGS = -4.5V) (VGS = -2.5V) D TSOP6 Top View D D G D D S 1 6 2 5 3 4 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol 10 Sec Steady State Parameter Drain-Source Voltage VDS -30 Gate-Source Voltage VGS TA=25°C Continuous Drain A Current -5 TA=70°C Pulsed Drain Current Power Dissipation ±12 A ID B -3.7 -3.2 Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient Maximum Junction-to-Lead C TJ, TSTG Symbol t ≤ 10s Steady State Steady State Alpha & Omega Semiconductor, Ltd. A -25 PD TA=70°C V -3.7 IDM TA=25°C Units V RθJA RθJL 1.6 1.0 1.0 0.7 -55 to 150 Typ 58 94 37 Max 80 120 50 W °C Units °C/W °C/W °C/W www.aosmd.com AO6401A Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = -250µA, VGS = 0V -30 Typ -1 TJ = 55°C -5 IGSS Gate-Body leakage current VDS = 0V, VGS = ±12V Gate Threshold Voltage VDS = VGS ID = -250µA -0.5 ID(ON) On state drain current VGS = -4.5V, VDS = -5V -25 ±100 nA -1.5 V 35 44 49 62 VGS = -4.5V, ID = -4.0A 44 55 mΩ 82 mΩ TJ=125°C A RDS(ON) Static Drain-Source On-Resistance VGS = -2.5V, ID = -3.5A 66 gFS Forward Transconductance VDS = -5V, ID = -5.0A 13 VSD Diode Forward Voltage IS = -1A,VGS = 0V IS Maximum Body-Diode Continuous Current -0.73 DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Qrr Turn-Off Fall Time Body Diode Reverse Recovery Time µA -1 VGS = -10V, ID = -5.0A Output Capacitance Units V VDS = -30V, VGS = 0V VGS(th) Coss Max 943 VGS= 0V, VDS= -15V, f=1MHz mΩ S -1 V -1.6 A 1180 pF 108 pF 73 VGS= 0V, VDS= 0V, f=1MHz VGS= -4.5V, VDS= -15V, ID= -5A VGS= -10V, VDS= -15V, RL=3Ω, RGEN=3Ω IF= -5A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF= -5A, dI/dt=100A/µs 3 pF 6 12 Ω 9.8 13 nC 2.0 nC 3.3 nC 5.2 ns 6.8 ns 42 ns 15 21 14.3 28 ns ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA Rev0 Oct 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6401A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 25 -3.5V -10V VDS= -5V 20 20 -3.0V 25°C 15 -ID(A) -ID (A) -4.5V 15 -2.5V 10 10 5 5 VGS=-2.0V 125°C -40°C 0 0 0 1 2 3 4 5 0 0.5 90 1.5 2 2.5 3 3.5 1.6 Normalized On-Resistance 80 VGS= -2.5V RDS(ON) (mΩ ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 70 60 50 VGS= -4.5V 40 VGS= -10V 30 VGS= -4.5V ID= -4A 1.4 VGS= -10V ID= -5A 1.2 VGS= -2.5V ID= -3.5A 1.0 0.8 0.6 0 2 4 I6F=-6.5A, 8dI/dt=100A/µs 10 -50 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 120 1E+01 ID= -5.0A 1E+00 100 80 60 -IS (A) RDS(ON) (mΩ ) 1E-01 125°C 25°C 40 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. -40°C 20 1 2 3 4 5 6 7 8 25°C 1E-03 1E-04 1E-05 -40°C 1E-06 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 125°C 1E-02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO6401A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1600 5 1400 -VGS (Volts) Capacitance (pF) VDS= -15V ID= -5A 4 3 2 1200 Ciss 1000 800 600 400 1 Coss 200 0 Crss 0 0 2 4 6 8 10 12 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 1000 TJ(Max)=150°C TA=25°C 10µs 100µs 1 RDS(ON) limited 1ms 10ms 100ms 0.1 TJ(Max)=150°C TA=25°C DC 0.1 0.00001 IF=-6.5A, dI/dt=100A/µs 10 100 1 -VDS (Volts) 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=120°C/W 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 10 1 10s 0.01 0.1 100 Power (W) 10 -ID (Amps) 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100 Zθ JA Normalized Transient Thermal Resistance 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com