AO4470 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4470 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Standard product AO4470 is Pb-free (meets ROHS & Sony 259 specifications). AO4470L is a Green Product ordering option. AO4470 and AO4470L are electrically identical. VDS (V) = 30V ID = 18A RDS(ON) < 5.5mΩ RDS(ON) < 6.2mΩ (V GS = 10V) (VGS = 10V) (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Pulsed Drain Current ID IDM TA=70°C B TA=25°C Power Dissipation Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±12 V 80 3 W 2.1 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 15 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 18 TA=25°C Continuous Drain Current A Maximum 30 RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W AO4470 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Conditions Min ID=250µA, VGS=0V 30 VDS=24V, VGS=0V Zero Gate Voltage Drain Current TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS ID=250µA 0.8 ID(ON) On state drain current VGS=4.5V, VDS=5V 80 TJ=125°C Static Drain-Source On-Resistance VGS=4.5V, ID=15A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS VDS=5V, ID=18A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=15V, ID=18A 100 nA 1.5 V 4.2 5.5 6.4 7.4 4.9 6.2 A 102 0.64 mΩ S 1 V 4.5 A 10500 pF pF 387 pF 0.4 0.8 Ω 72.4 85 nC 13.4 Gate Drain Charge 16.8 tD(on) Turn-On DelayTime 11 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs IF=18A, dI/dt=100A/µs mΩ 625 Qgd VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω µA 1.12 9130 VGS=0V, VDS=15V, f=1MHz Units V 1 5 VGS(th) VGS=10V, ID=18A Max 34 0.005 IGSS RDS(ON) Typ nC nC 15 ns 7 11 ns 99 135 ns 13 19.5 ns 33 40 22.2 30 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 0 : Apr. 2006 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4470 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 4.5V 80 50 2.5V 10V 40 ID(A) 60 ID (A) VDS=5V 40 30 20 VGS=2V 20 125°C 10 0 0 0 1 2 3 4 5 0 0.5 VDS (Volts) Figure 1: On-Region Characteristics 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 5.5 Normalized On-Resistance 1.6 VGS=4.5V 5.0 RDS(ON) (mΩ) 25°C 4.5 4.0 VGS=10V 3.5 VGS=4.5V ID=18A 1.4 VGS=10V 1.2 1 0.8 0 10 20 30 40 50 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 16 1.0E+01 1.0E+00 ID=18A 8 IS (A) RDS(ON) (mΩ) 12 125°C 1.0E-02 1.0E-03 25°C 4 125°C 1.0E-01 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C 1.0E-04 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4470 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12000 5 VDS=15V ID=18A 10000 Capacitance (pF) VGS (Volts) 4 3 2 1 8000 6000 4000 Coss 2000 0 Crss 0 0 10 20 30 40 50 60 70 80 Qg (nC) Figure 7: Gate-Charge Characteristics 90 0 100.0 100µs 10.0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 ID (Amps) 1s 10s DC 1.0 TJ(Max)=150°C TA=25°C 80 1ms 0.1s 60 40 20 TJ(Max)=150°C TA=25°C 0 0.001 0.1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 10 10µs Power (W) 10ms 0.1 5 100 RDS(ON) limited ZθJA Normalized Transient Thermal Resistance Ciss 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 Single Pulse 0.0001 0.001 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 Ton 100 1000