AOSMD AO7800

AO7800
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO7800 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.It
is ESD protected. Standard Product AO7800 is Pbfree (meets ROHS & Sony 259 specifications).
AO7800L is a Green Product ordering option.
AO7800 and AO7800L are electrically identical.
VDS (V) = 20V
ID = 0.9 A (VGS = 4.5V)
RDS(ON) < 300mΩ (VGS = 4.5V)
RDS(ON) < 350mΩ (VGS = 2.5V)
RDS(ON) < 450mΩ (VGS = 1.8V)
SC-70-6
(SOT-323)
Top View
D1
G2
S2
S1
G1
D2
D2
D1
G2
G1
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
TA=70°C
V
Junction and Storage Temperature Range
0.3
W
0.19
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
5
PD
TA=70°C
Alpha Omega Semiconductor, Ltd.
±8
0.7
ID
IDM
B
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
0.9
TA=25°C
Power Dissipation A
Maximum
20
RθJA
RθJL
Typ
360
400
300
°C
Max
415
460
350
Units
°C/W
°C/W
°C/W
AO7800
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
1
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=4.5V, V DS=5V
5
TJ=55°C
5
µA
0.75
0.9
V
181
300
253
350
VGS=2.5V, I D=0.75A
237
350
mΩ
VGS=1.8V, I D=0.7A
317
450
mΩ
1
V
0.4
A
120
pF
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=0.8A
2.6
VSD
Diode Forward Voltage
IS=0.5A,VGS=0V
Maximum Body-Diode Continuous Current
0.69
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
S
17
pF
14
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, V DS=10V, I D=0.8A
pF
3
4
Ω
1.57
1.9
nC
nC
Gate Drain Charge
0.36
nC
Turn-On DelayTime
3.2
ns
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
Qrr
101
VGS=0V, VDS=10V, f=1MHz
mΩ
0.13
Qgd
trr
µA
25
VGS=4.5V, I D=0.9A
IS
Units
V
VDS=16V, VGS=0V
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
IDSS
RDS(ON)
Typ
VGS=5V, VDS=10V, RL=12.5Ω,
RGEN=6Ω
4
ns
15.5
ns
2.4
Body Diode Reverse Recovery Time
IF=0.8A, dI/dt=100A/µs
6.7
Body Diode Reverse Recovery Charge
IF=0.8A, dI/dt=100A/µs
1.6
ns
8.1
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 3 : July 2003
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
ns
nC
AO7800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4
8V
10V
VDS=5V
5V
8
3
4V
ID (A)
ID(A)
3.5V
6
3V
4
25°C
125°C
2
2.5V
1
VGS=2V
2
0
0
0
1
2
3
4
5
0
0.5
480
1.5
2
2.5
3
1.8
440
VGS=1.8V
Normalized On-Resistance
VGS=1.8V
400
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
360
320
VGS=2.5V
280
240
VGS=4.5V
200
1.6
VGS=2.5V
ID=0.75A
I
0 7A
1.4
VGS=4.5V
ID=0.9A
1.2
1
160
0
1
2
3
0.8
4
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
500
1E+01
460
1E+00
420
125°C
ID=0.9A
380
1E-01
340
IS (A)
RDS(ON) (mΩ)
25
125°C
300
260
1E-02
25°C
1E-03
220
25°C
1E-04
180
140
1E-05
1
2
3
4
5
6
7
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
8
0.0
0.4
0.8
1.2
1.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
2.0
AO7800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
5
VDS=10V
ID=0.9A
Capacitance (pF)
VGS (Volts)
4
3
2
1
150
Ciss
100
Coss
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
2.0
5
TJ(Max)=150°C, TA=25°C
16
100µs
10ms
1s
0.1
10s
1
10
0
0.001
100
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=415°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
8
4
DC
0.0
0.1
20
12
1ms
0.1s
1.0
15
TJ(Max)=150°C
TA=25°C
10µs
Power (W)
ID (Amps)
RDS(ON)
limited
10
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
10.0
Crss
50
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000