AO4412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4412 uses advanced trench technology to provide excellent RDS(ON) and ultra low gate charge for use has a fast high side switch. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.Standard product AO4412 is Pb-free (meets ROHS & Sony 259 specifications). AO4412L is a Green Product ordering option. AO4412 and AO4412L are electrically identical. VDS (V) = 30V ID = 8.5A (V GS = 10V) RDS(ON) < 26mΩ (VGS = 10V) RDS(ON) < 34mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A ID IDM TA=70°C TA=25°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±12 V 60 3 W 2.1 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 7.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 8.5 TA=25°C Pulsed Drain Current B Power Dissipation Maximum 30 RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W AO4412 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage On state drain current ID(ON) RDS(ON) gFS VSD IS Conditions Min ID=250µA, VGS=0V 30 1 VGS=4.5V, VDS=5V VGS=10V, ID=8.5A Static Drain-Source On-Resistance tD(off) tf trr Qrr VGS=0V, VDS=15V, f=1MHz Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off DelayTime Turn-Off Fall Time 100 nA 1.8 3 V 22 26 28 34 mΩ 1 4 S V A A TJ=125°C Output Capacitance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time µA 30 VGS=4.5V, ID=5A Forward Transconductance VDS=5V, ID=5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VGS=4.5V, VDS=15V, ID=8.5A VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω IF=5A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs Units 1 5 TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA Max V VDS=24V, VGS=0V DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Typ 0.76 mΩ 590 162 40 0.45 pF pF pF Ω 6.04 1.46 2.56 3.7 nC nC nC ns 3.5 14.9 2.5 26 20 ns ns ns ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V 3V 25 2.5V 20 12 ID(A) ID (A) VDS=5V 16 4.5V 15 125°C 8 10 25°C 2V 4 5 VGS=1.5V 0 0 0 1 2 3 4 5 0 0.5 VDS (Volts) Fig 1: On-Region Characteristics 2 2.5 3 Normalized On-Resistance 1.8 50 RDS(ON) (mΩ) 1.5 VGS(Volts) Figure 2: Transfer Characteristics 60 VGS=2.5V 40 30 VGS=4.5V 20 VGS=10V 10 1.6 VGS=4.5V 1.4 VGS=10V 1.2 VGS=2.5V 1 0.8 0 5 10 15 20 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 90 1.0E+00 ID=5A 1.0E-01 125°C IS (A) 70 60 50 50 75 25°C 30 20 125 150 175 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 40 100 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 80 RDS(ON) (mΩ) 1 1.0E-05 1.0E-06 0.0 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=15V ID=8.5A 1200 Capacitance (pF) VGS (Volts) 4 3 2 1000 Ciss 800 600 400 1 0 0 1 2 3 4 5 0 6 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 25 30 TJ(Max)=150°C TA=25°C 40 Power (W) ID (Amps) 20 1ms 10.0 10ms 0.1s 1s 1.0 DC 1 10 100 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 0 0.001 0.1 0.1 30 10 10s ZθJA Normalized Transient Thermal Resistance 15 50 TJ(Max)=150°C TA=25°C 100µs 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited Crss Coss 200 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000