AOSMD AO8808AL

AO8808A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO8808A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
Standard Product AO8808A is Pb-free (meets ROHS
& Sony 259 specifications). AO8808AL is a Green
Product ordering option. AO8808A and AO8808AL
are electrically identical.
VDS (V) = 20V
ID = 7.9A (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 10V)
RDS(ON) < 15mΩ (VGS = 4.5V)
RDS(ON) < 20mΩ (VGS = 2.5V)
RDS(ON) < 28mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
TSSOP-8
Top View
D1
S1
S1
G1
1
2
3
4
D2
D1
8
7
6
5
D2
S2
S2
G2
G1
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
Units
V
±12
V
30
1.4
W
0.9
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
6.3
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Maximum
20
7.9
TA=25°C
Power Dissipation A
S2
RθJA
RθJL
Typ
73
96
63
Max
90
125
75
Units
°C/W
°C/W
°C/W
AO8808A
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
20
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±10V
25
BVGSO
Gate-Source Breakdown Voltage
VDS=0V, IG=±250uA
±12
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
VGS=10V, ID=8A
18
VGS=4.5V, ID=5A
11.7
15
mΩ
VGS=2.5V, ID=4A
15.2
20
mΩ
VGS=1.8V, ID=3A
21.5
28
mΩ
1
V
2.4
A
VDS=5V, ID=8A
36
0.6
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
V
14
Diode Forward Voltage
IS=1A,V GS=0V
Maximum Body-Diode Continuous Current
Rg
1
14.2
Forward Transconductance
Crss
µA
A
VSD
Output Capacitance
10
V
0.75
gFS
Coss
µA
10.6
TJ=125°C
IS
Units
10
TJ=55°C
VGS(th)
Static Drain-Source On-Resistance
Max
V
VDS=16V, V GS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=8A
mΩ
S
1810
pF
232
pF
200
pF
1.6
Ω
17.9
nC
1.5
nC
Qgd
Gate Drain Charge
4.7
nC
tD(on)
Turn-On DelayTime
2.5
ns
tr
Turn-On Rise Time
7.2
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, V DS=10V, R L=1.2Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=8A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge
IF=8A, dI/dt=100A/µs
49
ns
10.8
ns
20.2
8
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 1: Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO8808A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10
35
30
2.5V
4.5V
2V
VDS=5V
25
30
20
ID(A)
ID (A)
25
20
15
15
10
125°C
10
VGS=1.5V
5
5
0
25°C
0
0
1
2
3
4
5
0
0.5
1
1.5
2
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
30
1.6
RDS(ON) (mΩ)
Normalized On-Resistance
VGS=1.8V
25
20
VGS=2.5V
15
VGS=4.5V
10
VGS=10V
5
VGS=4.5V
ID=5A
VGS=2.5V
1.4
VGS=10V
1.2
VGS=1.8V
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
40
1.0E+01
35
1.0E+00
30
125°C
ID=5A
1.0E-01
25
20
IS (A)
RDS(ON) (mΩ)
2.5
125°C
15
1.0E-02
25°C
1.0E-03
25°C
10
1.0E-04
5
1.0E-05
0
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO8808A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
5
VDS=10V
ID=8A
2500
Capacitance (pF)
VGS (Volts)
4
3
2
1
Ciss
2000
1500
1000
Coss
500
0
Crss
0
0
4
8
12
16
20
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
100µs
1ms
10ms
1.0
1s
TJ(Max)=150°C
TA=25°C
0.1s
DC
1
0
0.001
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
10
20
10
10s
0.1
0.1
20
TJ(Max)=150°C
TA=25°C
10µs
Power (W)
ID (Amps)
40
RDS(ON)
limited
15
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000