AOL1400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1400 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and good body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard product AOL1400 is Pb-free (meets ROHS & Sony 259 specifications). AOL1400L is a Green Product ordering option. AOL1400 and AOL1400L are electrically identical. VDS (V) = 30V ID = 85A (V GS = 10V) RDS(ON) < 4.5mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.5V) Ultra SO-8TM Top View Fits SOIC8 footprint ! D S Bottom tab connected to drain D G S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C G Continuous Drain Current B ID IDM Pulsed Drain Current Continuous Drain TA=25°C Current G TA=70°C Avalanche Current C Power Dissipation B Power Dissipation A C 70 TA=25°C EAR A 145 mJ W 50 2.1 W 1.3 TJ, TSTG °C -55 to 175 Symbol t ≤ 10s Steady-State Steady-State 30 100 PDSM Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. A 13 PD TA=70°C A V 17 TC=100°C A ±12 200 IDSM IAR TC=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case C Units V 85 TC=100°C B Repetitive avalanche energy L=0.3mH Maximum 30 RθJA RθJC Typ 21 48 1 Max 25 60 1.5 Units °C/W °C/W °C/W AOL1400 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V VDS=24V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance gFS VSD IS VGS=4.5V, I D=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Min Conditions Typ Max 30 V 0.005 TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250μA VGS=4.5V, V DS=5V VGS=10V, I D=20A 0.6 100 TJ=125°C VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, V DS=15V, I D=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=100A/μs IF=20A, dI/dt=100A/μs Units 1.1 1 5 100 1.8 μA nA V A 3.9 5 4.6 102 0.64 4.5 6 5.5 mΩ 1 85 S V A 9130 625 387 0.4 10500 72.4 13.4 16.8 14.7 14.2 105.5 23.5 30.5 21 85 0.8 22 21 150 35 40 33 mΩ pF pF pF Ω nC nC nC ns ns ns ns ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. 62 D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. Rev 1: Dec 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOL1400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 10V 50 80 VDS=5V 4.5V 40 3.0V ID(A) 60 ID(A) 2.5V 40 30 125°C VGS=2V 20 20 25°C 10 0 0 1 2 3 4 0 5 0 VDS (Volts) Figure 1: On-Region Characteristics 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 6.0 Normalized On-Resistance 1.8 5.5 RDS(ON) (mΩ) 0.5 VGS=4.5V 5.0 4.5 VGS=10V 4.0 3.5 3.0 0 20 40 60 80 VGS=4.5 ID=20A 1.6 VGS=10V 1.4 1.2 1 0.8 100 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 12 1.0E+01 ID=20A 10 125°C 125°C IS (A) RDS(ON) (mΩ) 1.0E+00 8 6 4 1.0E-01 1.0E-02 1.0E-03 2 25°C 1.0E-04 25°C 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOL1400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12000 5 VDS=15V ID=20A Capacitance (pF) VGS (Volts) 4 Ciss 10000 3 2 8000 6000 4000 Coss 1 2000 0 Crss 0 0 20 40 60 80 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 TJ(Max)=175°C, TA=25°C 10μs TTJ(Max) =150°C J(Max)=175°C TTA=25°C =25°C A 800 100 1ms RDS(ON) limited 10 Power (W) ID (Amps) 100μs 10ms DC 1 600 400 200 0.1 0.1 1 10 100 0 0.0001 ZθJC Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJC=1.5°C/W 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note B) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 100 AOL1400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C Power Dissipation (W) ID(A), Peak Avalanche Current 100 80 60 40 20 0 0.00001 100 80 60 40 20 0 0.0001 0.001 0.01 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 100 100 80 80 60 Power (W) Current rating ID(A) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 40 20 60 40 20 0 0 25 50 75 100 125 150 175 0 0.01 TCASE (°C) Figure 14: Current De-rating (Note B) 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) ZθJA Normalized Transient Thermal Resistance 100 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 1 0.1 PD 0.01 0.001 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000