AOD488 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD488 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD488 is Pb-free (meets ROHS & Sony 259 specifications). AOD488L is a Green Product ordering option. AOD488 and AOD488L are electrically identical. VDS (V) = 40V (VGS = 10V) ID = 20 A RDS(ON) < 26 mΩ (VGS = 10V) RDS(ON) < 39 mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Units V ±20 V 20 TC=100°C Pulsed Drain Current Maximum 40 C A 15 ID IDM 50 C IAR 12 A Repetitive avalanche energy L=0.3mH C EAR 22 mJ Avalanche Current TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. 2 W 1.3 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 10 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B 20 PD RθJA RθJC Typ 17.4 50 4 °C Max 30 60 7.5 Units °C/W °C/W °C/W AOD488 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions ID=10mA, VGS=0V Min Typ 40 45 VDS=32V, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 50 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=8A gFS Forward Transconductance VSD IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge V 0.1 uA 2.3 3 V 21.5 26 34 41 31 39 mΩ 1 V 20 A 500 pF A mΩ 25 0.76 404 VGS=0V, VDS=20V, f=1MHz µA 5 VGS(th) Static Drain-Source On-Resistance Units 1 IGSS RDS(ON) Max S 95 pF 37 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A pF 2.7 4 Ω 9.2 12 nC 4.5 nC Qgs Gate Source Charge 1.6 nC Qgd Gate Drain Charge 2.6 nC tD(on) Turn-On DelayTime 3.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=20V, RL=1.0Ω, RGEN=3Ω 6 ns 13.2 ns 3.5 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 22.9 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 18.3 ns nC A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R thJA and the maximum allowed junction temperature of 150 °C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175 °C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175 °C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 °C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175 °C. G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 °C. The SOA curve provides a single pulse rating. Rev 0: Mar. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD488 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 60 55 VDS=5V 8V 10V 50 45 35 30 ID(A) ID (A) 15 5V 40 4.5V 25 20 4V 15 10 125°C 5 10 25°C VGS=3.5V 5 0 0 0 1 2 3 4 2 5 2.5 3 50 1.8 Normalized On-Resistance 40 VGS=4.5V 35 30 25 20 VGS=10V 15 10 0 5 10 15 20 4.5 500 150 60 45 RDS(ON) (mΩ) 4 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 25 VGS=10V ID=20A 1.6 1.4 VGS=4.5V ID=8A 1.2 1 0.8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 1.0E+02 ID=20A 90 1.0E+01 80 125°C 1.0E+00 70 125°C IS (A) RDS(ON) (mΩ) 3.5 60 1.0E-01 50 1.0E-02 40 1.0E-03 30 25°C 1.0E-04 25°C 20 1.0E-05 10 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD (Volts) Figure 6: Body-Diode Characteristics 1.6 AOD488 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 700 10 Capacitance (pF) VGS (Volts) 600 VDS=20V ID=20A 8 6 4 Ciss 500 400 300 Coss 200 Crss 2 100 0 0 2 4 6 8 0 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10 15 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 160 10.0 ID (Amps) 100µs DC 1ms 1.0 10ms TJ(Max)=175°C, TA=25°C 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=7.5°C/W Power (W) RDS(ON) limited 40 500 150 60 200 10µs ZθJC Normalized Transient Thermal Resistance 5 TJ(Max)=175°C TA=25°C 120 80 40 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOD454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 12 Power Dissipation (W) ID(A), Peak Avalanche Current 14 10 8 6 4 TA=25°C 2 0 20 15 10 5 0 0.00001 0.0001 0.001 0 25 25 50 20 40 15 10 75 100 125 150 175 500 150 60 TA=25°C 30 20 10 5 0 0 0 25 50 75 100 125 150 0.001 175 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note B) ZθJA Normalized Transient Thermal Resistance 50 TCASE (°C) Figure 13: Power De-rating (Note B) Power (W) Current rating ID(A) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000