AOL1414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1414 uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOL1414 is Pb-free (meets ROHS & Sony 259 specifications). AOL1414L is a Green Product ordering option. AOL1414 and AOL1414L are electrically identical. VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 6.5mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V) Ultra SO-8TM Top View D S Fits SOIC8 footprint ! Bottom tab connected to drain D G S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B TC=25°C ID IDM Pulsed Drain Current Continuous Drain TA=25°C Current G TA=70°C Avalanche Current C Power Dissipation B Power Dissipation A C TC=25°C Junction and Storage Temperature Range IDSM IAR 12 30 A EAR 135 mJ 100 2.5 W 1.6 TJ, TSTG t ≤ 10s Steady-State Steady-State W 50 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. A 200 PDSM TA=70°C A V 70 PD TA=25°C A ±12 15 TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case C Units V 85 TC=100°C Repetitive avalanche energy L=0.3mH Maximum 30 RθJA RθJC Typ 19.5 48 1 °C Max 25 60 1.5 Units °C/W °C/W °C/W AOL1414 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions Min ID=250μA, VGS=0V VDS=24V, VGS=0V 30 VDS=0V, VGS= ±12V VDS=VGS ID=250μA VGS=10V, VDS=5V VGS=10V, ID=20A Static Drain-Source On-Resistance gFS VSD IS VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Gate Source Charge Qgs Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Max 0.002 1 5 100 2 1 100 TJ=125°C VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=100A/μs IF=20A, dI/dt=100A/μs Units V TJ=55°C RDS(ON) DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Coss Crss Reverse Transfer Capacitance Gate resistance Rg Typ 1.5 μA nA V A 4.9 6.9 6 90 0.74 6.5 8.3 7.5 mΩ 1 85 S V A 2100 536 165 0.95 2520 19.7 3.6 7.9 5.9 11 36.2 12 24 10 17 55 18 nC nC nC ns ns ns ns 35 33 42 50 ns nC 1.5 mΩ pF pF pF Ω A: The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. Continuous Drain CurTinC=25°C F. These curves are based T on=100°C the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming C a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev1: Dec. 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOL1414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 3.5V 50 50 VDS=5V 3V 40 125°C ID(A) ID (A) 40 30 30 20 25°C 20 VGS=2.5V 10 10 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 7 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 3.5 1.8 Normalized On-Resistance ID=20A 6.5 RDS(ON) (mΩ) VGS=10V 1.6 VGS=4.5V 6 1.4 5.5 VGS=10V VGS=4.5V 1.2 5 4.5 4 1 0.8 0 10 20 30 40 50 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature Continuous Drain Cur TC=25°C 20 TC=100°C 1.0E+02 1.0E+01 16 125°C 1.0E+00 IS (A) ID=20A RDS(ON) (mΩ) 25 12 1.0E-01 25°C 1.0E-02 125°C 1.0E-03 8 25°C 1.0E-04 1.0E-05 4 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOL1414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 5 VDS=15V ID=20A 3000 Capacitance (pF) VGS (Volts) 4 3 2 2500 Ciss 2000 1500 Coss 1000 1 Crss 500 0 0 0 5 10 15 20 25 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 250 10μs RDS(ON) limited 1ms 100μs DC 10 T J(Max)=175°C T C=25°C 1 T J(Max)=175°C T C=25°C 210 Power (W) 100 ID (Amps) 5 170 130 90 50 0.0001 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Continuous Drain Cur TC=25°C 10 TC=100°C D=T /T 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse on ZθJC Normalized Transient Thermal Resistance 0.001 T J,PK =T A+PDM.ZθJA.RθJA RθJC=1.5°C/W 1 PD 0.1 T on Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOL1414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 T A=25°C 80 Power Dissipation (W) ID(A), Peak Avalanche Current 100 60 40 20 0 0.00001 90 60 30 0 0.0001 0.001 0.01 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 100 100 80 80 Power (W) Current rating ID(A) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 60 40 20 60 40 20 0 0 25 50 75 100 125 150 175 0 0.01 TCASE (°C) Figure 14: Current De-rating (Note B) 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) ZθJA Normalized Transient Thermal Resistance Continuous Drain Cur TC=25°C 10 TC=100°C In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 0.001 0.00001 0.0001 0.001 0.01 T on T 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000