AOD421 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD421 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for load switching. It is ESD protected. Standard Product AOD421 is Pb-free (meets ROHS & Sony 259 specifications). AOD421L is a Green Product ordering option. AOD421 and AOD421L are electrically identical. VDS (V) = -20V ID = -12.5 A (VGS = -10V) RDS(ON) < 75mΩ (VGS = -10V) RDS(ON) < 95mΩ (VGS = -4.5V) RDS(ON) < 145mΩ (VGS = -2.5V) ESD Rating: 2000V HBM TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TA=25°C C Power Dissipation Junction and Storage Temperature Range 2 Alpha & Omega Semiconductor, Ltd. W 1.33 -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 9.4 TJ, TSTG Thermal Characteristics Parameter A -30 PDSM TA=70°C Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A B Maximum Junction-to-Case V 18.8 PD TC=100°C TA=25°C A ±12 -8.9 ID IDM TC=25°C Power Dissipation B Units V -12.5 TA=70°C Pulsed Drain Current Maximum -20 RθJA RθJC °C Typ Max Units 23 50 6 28 60 8 °C/W °C/W °C/W AOD421 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=-250µA, VGS=0V -20 -0.5 TJ=55°C -2.5 µA VDS=0V, VGS=±12V ±10 µA -1.4 V Gate Threshold Voltage VDS=VGS ID=-250µA -0.7 VGS=-4.5V, VDS=-5V -15 VGS=-10V, ID=-12.5A TJ=125°C VGS=-4.5V, ID=-3A Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime 75 95 mΩ 145 mΩ mΩ S -0.81 V DYNAMIC PARAMETERS Ciss Input Capacitance Rg 75 105 8.8 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Reverse Transfer Capacitance 61 83 110 VSD Crss A VDS=-5V, ID=-12.5A Forward Transconductance Output Capacitance -0.9 VGS=-2.5V, ID=-1A gFS Coss µΑ ±1 On state drain current IS Units VDS=0V, VGS=±10V ID(ON) Static Drain-Source On-Resistance Max V VDS=-16V, VGS=0V VGS(th) RDS(ON) Typ -1 512 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-12.5A VGS=-10V, VDS=-10V, RL=0.75Ω, RGEN=3Ω -8.5 A 620 pF 77 pF 62 pF 9.2 13 Ω 4.6 nC 0.9 nC 2.1 nC 5.2 ns 38 ns 17 ns tf Turn-Off Fall Time 31 ns trr Body Diode Reverse Recovery Time IF=-12.5A, dI/dt=100A/µs 19 Qrr Body Diode Reverse Recovery Charge IF=-12.5A, dI/dt=100A/µs 6.3 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. I. Revision 0: July 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD421 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 40 -10.0V VDS=-5V 30 -5.0V 25 -4.0V 20 -3.0V 15 -2.5V 10 -2.0V 8 6 -ID(A) -ID (A) 35 4 125°C 2 25°C VGS=-1.5V 5 0 0 0 1 2 3 4 5 0 0.5 160 1.5 2 2.5 3 3.5 1.6 ID=-3A, VGS=-4.5V 140 Normalized On-Resistance VGS=-2.5V 120 RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 100 VGS=-4.5V 80 60 VGS=-10V 40 ID=-12.5A, VGS=-10V 1.4 1.2 ID=-1A, VGS=-2.5V 1.0 20 0 2 4 6 8 10 12 0.8 14 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 200 ID=-12.5A 180 1E+00 125°C 160 1E-01 125°C 140 -IS (A) RDS(ON) (mΩ) 25 120 100 25°C 1E-02 1E-03 1E-04 80 1E-05 60 25°C 1E-06 40 0.0 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOD421 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 ID=-12.5A Ciss 600 Capacitance (pF) -VGS (Volts) 4 3 2 1 400 200 Coss Crss 0 0 1 2 3 4 5 0 6 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 100 10 80 70 Power (W) ID (Amps) DC 20 TJ(Max)=175°C TA=25°C 90 100µs 1ms 1 60 50 40 30 20 RDS(ON) limited 10 0 0.0001 0.1 ZθJA Normalized Transient Thermal Resistance 15 100 10µs 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 10 -VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=175C, TA=25°C 0.1 5 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=8°C/W 100 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-tocase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOD421 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 14 18 Power Dissipation (W) Current rating ID(A) 12 10 8 6 4 2 16 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 0 175 0 25 TCASE (°C) Figure 12: Current De-rating (Note B) 100 10 Power (W) ID (Amps) 1ms 100m 1 1s 10s DC 1 10 175 30 20 0 0.001 100 VDS (Volts) Figure 14: Maximum Forward Biased Safe Operating Area (Note H) ZθJA Normalized Transient Thermal Resistance 150 10 0.1 1 125 TA=25°C 40 100µs 10 100 50 10µs 0.1 75 TCASE (°C) Figure 13: Power De-rating (Note B) TJ(Max)=150°C, TA=25°C RDS(ON) limited 50 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.1 0.01 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000