AO6420 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6420 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 60V ID = 4.2A (VGS = 10V) RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) Rg,Ciss,Coss,Crss Tested! TSOP-6 Top View D D G 1 6 2 5 3 4 D D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A,F Pulsed Drain Current TA=70°C ID IDM B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V 20 2.00 W 1.28 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 3.4 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 4.2 TA=25°C Power Dissipation Maximum 60 RθJA RθJL Typ 48 74 35 °C Max 62.5 110 40 Units °C/W °C/W °C/W www.aosmd.com AO6420 N Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 1 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 20 VGS=10V, I D=4.2A TJ=125°C Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge V 50 60 A 85 13 IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Coss nA 3 VDS=5V, ID=4.2A Forward Transconductance Crss 100 60 gFS VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, I D=4.2A 75 mΩ mΩ S 0.78 450 VGS=0V, VDS=30V, f=1MHz µA 2.3 VGS=4.5V, I D=3A VSD Units V VDS=60V, VGS=0V VGS(th) IS Max 60 IGSS RDS(ON) Typ 1 V 3 A 540 pF 60 pF 25 pF 1.65 2 Ω 9.5 11.5 nC 4.3 5.5 nC Qgs Gate Source Charge Qgd Gate Drain Charge 2.2 tD(on) Turn-On DelayTime 5.1 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 1.6 nC nC 7 ns VGS=10V, VDS=30V, RL=7Ω, RGEN=3Ω 2.6 4 ns 15.9 20 ns 2 3 ns 25.1 35 28.7 ns nC trr Body Diode Reverse Recovery Time IF=4.2A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=4.2A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t ≤ 10s thermal resistance rating. Rev0: Feb. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 20 15 10.0V 5.0V VDS=5V 10 4.5V 125°C ID(A) ID (A) 15 10 4.0V 5 5 25°C VGS=3.5V 0 0 1 2 3 4 0 5 2 2.5 VDS (Volts) Fig 1: On-Region Characteristics 4 4.5 5 2 Normalized On-Resistance 90 80 RDS(ON) (mΩ) 3.5 VGS(Volts) Figure 2: Transfer Characteristics 100 VGS=4.5V 70 60 50 VGS=10V 40 30 20 0 5 10 15 VGS=10 ID=4.2A 1.8 1.6 VGS=4.5V 1.4 ID=3A 1.2 1 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 160 ID=4.2A 140 1.0E+00 125°C 1.0E-01 100 IS (A) 120 RDS(ON) (mΩ) 3 125°C 1.0E-02 25°C 1.0E-03 80 1.0E-04 25°C 60 1.0E-05 40 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO6420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 800 10 VDS=30V ID= 4.2A Capacitance (pF) VGS (Volts) 8 6 4 2 600 Ciss 400 Coss 200 Crss 0 0 0 2 4 6 8 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 30 40 50 60 40 TJ(Max)=150°C TA=25°C 10.0 10µs RDS(ON) limited 1.0 0.1 100µ 1ms 10ms 0.1s 1s DC TJ(Max)=150°C TA=25°C 30 Power (W) ID (Amps) 20 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 0.1 1 VDS (Volts) 10 0 0.001 100 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 10 10s 0.0 0.01 ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com