AOSMD AOU456

AOU456
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOU456 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOU456 is Pb-free (meets ROHS & Sony
259 specifications). AOU456L is a Green Product
ordering option. AOU456 and AOU456L are
electrically identical.
VDS (V) = 25V
ID = 50A (VGS = 10V)
RDS(ON) <7 mΩ (VGS = 10V)
RDS(ON) <10 mΩ (VGS = 4.5V)
193
18
TO-251
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
C
C
Repetitive avalanche energy L=0.1mH
C
TC=25°C
Power Dissipation B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
V
A
50
150
IAR
30
A
EAR
45
mJ
50
W
25
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case B
±20
ID
IDM
PD
TC=100°C
A
Units
V
50
TC=100°C
Pulsed Drain Current
Avalanche Current
Maximum
25
°C
-55 to 175
Steady-State
Symbol
RθJA
Steady-State
RθJC
Typ
Max
Units
41
2.1
50
3
°C/W
°C/W
AOU456
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
ID=250uA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
100
nA
3
V
5.5
7
A
8
8.5
45
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
µA
1.74
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
V
VGS=4.5V, ID=20A
VSD
Crss
1
100
TJ=125°C
Forward Transconductance
Coss
0.01
Units
5
1
VGS=10V, ID=20A
gFS
IS
Max
TJ=55°C
VGS(th)
Static Drain-Source On-Resistance
Typ
25
VDS=20V, VGS=0V
IGSS
RDS(ON)
Min
0.74
1850
VGS=0V, VDS=12.5V, f=1MHz
mΩ
10
S
1
V
50
A
2220
pF
472
pF
275
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=12.5V, ID=20A
pF
0.86
1.2
Ω
31.7
38
nC
15.7
19
nC
Qgs
Gate Source Charge
5.8
nC
Qgd
Gate Drain Charge
8.2
nC
tD(on)
Turn-On DelayTime
7.5
ns
tr
Turn-On Rise Time
14
ns
tD(off)
Turn-Off DelayTime
30
ns
tf
Turn-Off Fall Time
11.5
ns
VGS=10V, VDS=12.5V,
RL=0.625Ω, RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
30.9
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
20.3
37
ns
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires. Rev1: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOU456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
60
10V
6V
80
50
5V
VDS=5V
40
60
4.0V
ID(A)
ID (A)
4.5V
40
30
125°C
20
VGS=3.5
20
25°C
494
692
10
0
593
830
0
0
1
2
3
4
5
1
2
3
10
5
193
18
Normalized On-Resistance
1.8
8
VGS=4.5V
6
VGS=10V
4
4
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
RDS(ON) (mΩ)
4.63
1.6
VGS=10V, 20A
1.4
1.2
VGS=4.5V, 20A
1
2
0
10
20
30
40
50
0.8
60
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
75
59
100
142
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
12
100
10
ID=20A
10
125°C
1
IS (A)
RDS(ON) (mΩ)
25
8
0.1
0.01
125°C
25°C
0.001
6
0.0001
25°C
0.00001
4
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR0.0THE CONSUMER
MARKET.
0.2
0.4
0.6
0.8APPLICATIONS
1.0
1.2 OR
3
4
5
6
7
8
9
10
VGS (Volts)
Figure
5: RELIABILITY
On-Resistance vs.
Gate-Source
Voltage
FUNCTIONS
AND
WITHOUT
NOTICE.
Alpha & Omega Semiconductor, Ltd.
VSD (Volts)
Figure 6: Body-Diode Characteristics
AOU456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
VDS=12.5V
ID=20A
2500
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
2000
1500
4.63
Coss
1000
494
692
500
593
830
Crss
0
0
0
5
10
15
20
25
30
35
40
0
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
193
18
1000
200
TJ(Max)=175°C, TA=25°C
160
100µs
10
DC
Power (W)
ID (Amps)
10µs
RDS(ON)
limited
100
1ms
1
TJ(Max)=175°C
TA=25°C
120
80
40
0.1
0.1
1
10
100
VDS (Volts)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
0
0.0001
0.001
0.01
59
0.1
142
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
ZθJC Normalized Transient
Thermal Resistance
25
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
THIS0.01
PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
FUNCTIONS AND RELIABILITY
NOTICE.
Figure WITHOUT
11: Normalized
Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOU456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
tA =
50
L ⋅ ID
BV − VDD
Power Dissipation (W)
ID(A), Peak Avalanche Current
60
40
30
20
TA=25°C
40
30
4.63
20
494
692
10
593
830
0
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
50
40
30
20
10
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note B)
193
60
Current rating ID(A)
50
175
175