AOU456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOU456 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU456 is Pb-free (meets ROHS & Sony 259 specifications). AOU456L is a Green Product ordering option. AOU456 and AOU456L are electrically identical. VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) <7 mΩ (VGS = 10V) RDS(ON) <10 mΩ (VGS = 4.5V) 193 18 TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G C C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. V A 50 150 IAR 30 A EAR 45 mJ 50 W 25 TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case B ±20 ID IDM PD TC=100°C A Units V 50 TC=100°C Pulsed Drain Current Avalanche Current Maximum 25 °C -55 to 175 Steady-State Symbol RθJA Steady-State RθJC Typ Max Units 41 2.1 50 3 °C/W °C/W AOU456 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions ID=250uA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 100 nA 3 V 5.5 7 A 8 8.5 45 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance µA 1.74 VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance V VGS=4.5V, ID=20A VSD Crss 1 100 TJ=125°C Forward Transconductance Coss 0.01 Units 5 1 VGS=10V, ID=20A gFS IS Max TJ=55°C VGS(th) Static Drain-Source On-Resistance Typ 25 VDS=20V, VGS=0V IGSS RDS(ON) Min 0.74 1850 VGS=0V, VDS=12.5V, f=1MHz mΩ 10 S 1 V 50 A 2220 pF 472 pF 275 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=12.5V, ID=20A pF 0.86 1.2 Ω 31.7 38 nC 15.7 19 nC Qgs Gate Source Charge 5.8 nC Qgd Gate Drain Charge 8.2 nC tD(on) Turn-On DelayTime 7.5 ns tr Turn-On Rise Time 14 ns tD(off) Turn-Off DelayTime 30 ns tf Turn-Off Fall Time 11.5 ns VGS=10V, VDS=12.5V, RL=0.625Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 30.9 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 20.3 37 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev1: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOU456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 10V 6V 80 50 5V VDS=5V 40 60 4.0V ID(A) ID (A) 4.5V 40 30 125°C 20 VGS=3.5 20 25°C 494 692 10 0 593 830 0 0 1 2 3 4 5 1 2 3 10 5 193 18 Normalized On-Resistance 1.8 8 VGS=4.5V 6 VGS=10V 4 4 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics RDS(ON) (mΩ) 4.63 1.6 VGS=10V, 20A 1.4 1.2 VGS=4.5V, 20A 1 2 0 10 20 30 40 50 0.8 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 59 100 142 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 12 100 10 ID=20A 10 125°C 1 IS (A) RDS(ON) (mΩ) 25 8 0.1 0.01 125°C 25°C 0.001 6 0.0001 25°C 0.00001 4 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR0.0THE CONSUMER MARKET. 0.2 0.4 0.6 0.8APPLICATIONS 1.0 1.2 OR 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: RELIABILITY On-Resistance vs. Gate-Source Voltage FUNCTIONS AND WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. VSD (Volts) Figure 6: Body-Diode Characteristics AOU456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=12.5V ID=20A 2500 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 2000 1500 4.63 Coss 1000 494 692 500 593 830 Crss 0 0 0 5 10 15 20 25 30 35 40 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 193 18 1000 200 TJ(Max)=175°C, TA=25°C 160 100µs 10 DC Power (W) ID (Amps) 10µs RDS(ON) limited 100 1ms 1 TJ(Max)=175°C TA=25°C 120 80 40 0.1 0.1 1 10 100 VDS (Volts) 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 0 0.0001 0.001 0.01 59 0.1 142 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJC Normalized Transient Thermal Resistance 25 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse THIS0.01 PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) FUNCTIONS AND RELIABILITY NOTICE. Figure WITHOUT 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOU456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 tA = 50 L ⋅ ID BV − VDD Power Dissipation (W) ID(A), Peak Avalanche Current 60 40 30 20 TA=25°C 40 30 4.63 20 494 692 10 593 830 0 10 0.000001 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 50 40 30 20 10 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) 193 60 Current rating ID(A) 50 175 175