AP2318GEN
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V gate drive
D
▼ Small outline package
▼ RoHS Compliant
BVDSS
30V
RDS(ON)
720mΩ
ID
1A
S
SOT-23
G
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
D
G
The SOT-23 package is universally used for all commercial-industrial
applications.
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
30
V
±16
V
3
1
A
3
0.8
A
2
A
Continuous Drain Current , VGS @ 4.5V
Continuous Drain Current , VGS @ 4.5V
1,2
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
90
℃/W
200811051-1/4
AP2318GEN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.04
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=4V, ID=500mA
-
-
720
mΩ
VGS=2.5V, ID=200mA
-
-
1200
mΩ
VDS=VGS, ID=250uA
0.4
-
1.3
V
VDS=4V, ID=500mA
-
725
-
mS
Drain-Source Leakage Current (Tj=25 C)
VDS=30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=24V ,VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±16V
-
-
±30
uA
ID=1A
-
1.1
1.8
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
IGSS
2
VGS=0V, ID=250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=25V
-
0.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
0.4
-
nC
VDS=15V
-
17
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
44
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
45
-
ns
tf
Fall Time
RD=15Ω
-
55
-
ns
Ciss
Input Capacitance
VGS=0V
-
30
48
pF
Coss
Output Capacitance
VDS=25V
-
12
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
11
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=1A, VGS=0V
Max. Units
1.3
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
2/4
AP2318GEN
2.5
2.5
5.0V
4.5V
4.0 V
ID , Drain Current (A)
2.0
o
5.0V
4.5V
TA=150 C
2.0
ID , Drain Current (A)
o
T A = 25 C
1.5
1.0
2.5V
4.0 V
1.5
1.0
2.5V
0.5
0.5
V G = 1 .5V
V G = 1 .5V
0.0
0.0
0.0
2.0
4.0
0.0
6.0
2.0
4.0
6.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3300
2.0
I D =500mA
V G =4V
I D =200mA
T A =25 o C
Normalized RDS(ON)
1.6
RDS(ON) (mΩ )
2300
1300
1.2
0.8
0.4
300
1
2
3
4
-50
5
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.0
0.8
Normalized VGS(th) (V)
IS(A)
1.5
0.6
T j =150 o C
T j =25 o C
0.4
1.0
0.5
0.2
0.0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP2318GEN
f=1.0MHz
12
100
V DS =15V
V DS =20V
V DS =25V
9
C (pF)
VGS , Gate to Source Voltage (V)
I D =1A
6
C iss
3
C oss
C rss
10
0
0.0
0.5
1.0
1.5
2.0
1
2.5
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
10
1
ID (A)
10ms
100ms
0.1
o
T A =25 C
Single Pulse
1s
DC
Duty factor=0.5
0.2
0.1
0.1
PDM
t
T
0.05
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 270 ℃ /W
0.01
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
2.0
VG
V DS =5V
ID , Drain Current (A)
1.5
QG
4.5V
T j =25 o C
T j =150 o C
QGS
1.0
QGD
0.5
Charge
Q
0.0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
4/4