AP2309N
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Package Outline
D
▼ Surface Mount Device
BVDSS
-30V
RDS(ON)
75mΩ
ID
- 3.7A
S
SOT-23
Description
G
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
G
S
The SOT-23 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
- 30
V
±20
V
3
- 3.7
A
3
-3
A
Continuous Drain Current
Continuous Drain Current
1,2
IDM
Pulsed Drain Current
-12
A
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
90
℃/W
200513041
AP2309N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-3A
-
-
75
mΩ
VGS=-4.5V, ID=-2.6A
-
-
120
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=-10V, ID=-3A
-
5
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=55 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=-3A
-
5
8
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3
-
nC
VDS=-15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
20
-
ns
tf
Fall Time
RD=15Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
412
660
pF
Coss
Output Capacitance
VDS=-25V
-
91
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
62
-
pF
Min.
Typ.
IS=-1.2A, VGS=0V
-
-
-1.2
V
IS=-3A, VGS=0V,
-
20
-
ns
dI/dt=100A/µs
-
15
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
Max. Units
AP2309N
45
45
35
-7.0V
35
-ID , Drain Current (A)
40
T A =25 o C
40
-ID , Drain Current (A)
-10V
30
25
-5.0V
-4.5V
20
15
10
T A = 150 o C
-7.0V
30
25
-5.0V
-4.5V
20
15
10
V G = - 3 .0V
5
V G = - 3 .0V
5
0
0
0
2
4
6
8
10
0
2
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
105
1.6
I D =3A
V G =10V
I D =-2.6A
o
95
1.4
T A =25 C
Normalized RDS(ON)
RDS(ON) (mΩ )
-10V
85
75
1.2
1.0
0.8
65
0.6
55
3
5
7
9
-50
11
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.3
Normalized -VGS(th) (V)
3
-IS(A)
2
T j =150 o C
T j =25 o C
1
0
1.1
0.9
0.7
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP2309N
f=1.0MHz
-VGS , Gate to Source Voltage (V)
12
1000
ID= -3A
V DS = -24V
10
C iss
C (pF)
8
6
100
C oss
C rss
4
2
0
10
0
2
4
6
8
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
-ID (A)
10
1ms
1
10ms
0.1
o
T A =25 C
Single Pulse
100ms
1s
DC
0.01
0.2
0.1
0.1
0.05
PDM
t
0.01
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Single Pulse
Rthja = 270℃
℃ /W
0.001
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Circuit
Charge
Fig 12. Gate Charge Circuit
Q