AP630P
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
BVDSS
200V
▼ Repetitive Avalanche Rated
RDS(ON)
400mΩ
▼ Fast Switching
ID
▼ Simple Drive Requirement
G
D
9A
TO-220
S
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50
watts. The through-hole version (AP630P) is available for low-profile
applications.
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage
± 30
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
9
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
5.7
A
1
IDM
Pulsed Drain Current
36
A
PD@TC=25℃
Total Power Dissipation
74
W
0.59
W/℃
240
mJ
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
9
A
EAR
Repetitive Avalanche Energy
7
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
1.7
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data & specifications subject to change without notice
200219032
AP630P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
200
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.248
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5A
-
-
400
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
40
-
S
VDS=200V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=160V, VGS=0V
-
-
100
uA
Gate-Source Forward Leakage
VGS= ± 30V
-
-
±100
nA
ID= 9A
-
25
-
nC
VGS=0V, ID=250uA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=160V
-
3.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
14
-
nC
VDD=100V
-
8
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID= 9A
-
26
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
34
-
ns
tf
Fall Time
RD=11Ω
-
22
-
ns
Ciss
Input Capacitance
VGS=0V
-
515
-
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Min.
Typ.
-
-
9
A
-
-
36
A
-
-
1.3
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
3
Forward On Voltage
1
Tj=25℃, IS=9A, VGS=0V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=4.5mH , RG=25Ω , IAS=9A.
3.Pulse width <300us , duty cycle <2%.
Max. Units
AP630P
10
V G =10V
T C =25 o C
14
V G =10V
V G =8.0V
V G =8.0V
V G =7.0V
8
ID , Drain Current (A)
12
ID , Drain Current (A)
T C =150 o C
10
V G =6.0V
8
6
V G =7.0V
V G =6.0V
6
4
V G =5.0V
4
2
V G =5.0V
V G =4.0V
2
V G =4.0V
0
0
0
2
4
6
8
10
12
0
14
2
4
6
8
10
12
14
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I D =5A
V G =10V
2.5
Normalized R DS(ON)
Normalized BVDSS (V)
1.1
1
2
1.5
1
0.9
0.5
0.8
0
-50
0
50
100
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS v.s. Junction
Temperature
150
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
AP630P
10
80
8
6
PD (W)
ID , Drain Current (A)
60
40
4
20
2
0
0
25
50
75
100
125
0
150
50
100
150
o
o
Tc , Case Temperature ( C)
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
Normalized Thermal Response (R thjc)
100
10us
10
ID (A)
100us
1ms
10ms
1
100ms
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
SINGLE PULSE
T
0.01
Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
T c =25 o C
Single Pulse
0.01
0
1
10
100
V DS (V)
Fig 7. Maximum Safe Operating Area
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
AP630P
f=1.0MHz
10000
16
I D =9A
V DS =80V
12
V DS =120V
Ciss
V DS =160V
10
C (pF)
VGS , Gate to Source Voltage (V)
14
8
100
Coss
6
Crss
4
2
0
0
5
10
15
20
25
30
1
35
1
11
21
31
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100.00
4
10.00
3.5
T j =150 o C
VGS(th) (V)
IS (A)
T j =25 o C
1.00
0.10
3
2.5
0.01
2
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
o
T j Junction Temperayure ( C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP630P
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.5x RATED VDS
G
+
10%
VGS
S
10 V
VGS
-
td(on)
Fig 13. Switching Time Circuit
tr
td(off) tf
Fig 14. Switching Time Waveform
VG
VDS
10V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q