AP20P02GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ 2.5V Gate Drive Capability
▼ Fast Switching
BVDSS
-20V
RDS(ON)
52mΩ
ID
G
-18A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
S
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP20P02GJ) are available for low-profile applications.
G
D
TO-252(H)
TO-251(J)
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
- 20
V
VGS
Gate-Source Voltage
± 12
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-18
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-14
A
-50
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
31.25
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
4.0
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
201225023
AP20P02GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
RDS(ON)
-20
-
-
V
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.03
-
V/℃
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-8A
-
-
52
mΩ
VGS=-2.5V, ID=-5A
-
-
85
mΩ
-0.5
-
-
V
VDS=-10V, ID=-8A
-
15
-
S
VDS=-20V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=-16V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ± 12
-
-
ID=-8A
-
13.5
-
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
Min. Typ. Max. Units
2
±100 nA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
2.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
1.6
-
nC
VDS=-10V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-8A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-4.5V
-
45
-
ns
tf
Fall Time
RD=1.25Ω
-
27
-
ns
Ciss
Input Capacitance
VGS=0V
-
1050
-
pF
Coss
Output Capacitance
VDS=-16V
-
410
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=-1.2V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
2
Forward On Voltage
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
1
Tj=25℃, IS=-10A, VGS=0V
Min. Typ. Max. Units
-
-
-10
A
-
-
-50
A
-
-
-1.2
V
AP20P02GH/J
60
45
T C =25 C
-4.5V
T C =150 o C
-4.5V
o
-4.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
-4.0V
40
-3.5V
-3.0V
20
-2.5V
-3.5V
30
-3.0V
-2.5V
15
VGS= -2.0V
VGS= -2.0V
0
0
0
2
4
0
6
2.5
5
7.5
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
160
2
I D = -8A
V GS = -4.5V
I D = -8A
T c =25 ℃
120
Normalized R DS(ON)
RDS(ON) (mΩ )
1.4
80
0.8
40
0
0.2
0
3
6
9
-V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
12
-50
0
50
100
o
T j , Junction Temperature ( C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
AP20P02GH/J
20
40
16
12
PD (W)
-ID , Drain Current (A)
30
20
8
10
4
0
0
25
50
75
100
125
0
150
30
T c , Case Temperature ( o C)
60
90
120
150
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Normalized Thermal Response (R thjc)
Duty Factor = 0.5
-ID (A)
100us
10
1ms
10ms
T C =25 °C
Single Pulse
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak T j = PDM x Rthjc + TC
100ms
DC
0.01
1
0.00001
0.1
1
10
-V DS (V)
Fig 7. Maximum Safe Operating Area
0.0001
0.001
0.01
0.1
100
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
1
AP20P02GH/J
8
10000
f=1.0MHz
6
Ciss
1000
C (pF)
-VGS , Gate to Source Voltage (V)
I D = -8A
V DS = -16V
4
Coss
Crss
100
2
0
10
0
5
10
15
20
1
7
13
19
-V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
1.2
0.9
-IS(A)
T j =150 o C
-VGS(th) (V)
10
T j =25 o C
0.6
1
0.3
0
0
0.2
0.5
0.8
1.1
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
o
T j , Junction Temperature ( C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP20P02GH/J
VDS
90%
RD
VDS
D
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
RG
G
10%
S
VGS
VGS
-4.5 V
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
TO THE
OSCILLOSCOPE
D
0.8 x RATED VDS
G
S
QG
-4.5V
QGS
QGD
VGS
-1~-3mA
I
G
ID
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q