AP20N03S/P
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
BVDSS
30V
▼ Repetitive Avalanche Rated
RDS(ON)
52mΩ
▼ Fast Switching
ID
D
G
▼ Simple Drive Requirement
20A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
S
TO-263(S)
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP20N03P) is available for low-profile applications.
G
D
Absolute Maximum Ratings
Symbol
Parameter
TO-220(P)
S
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
± 20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
20
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
13
A
1
IDM
Pulsed Drain Current
60
A
PD@TC=25℃
Total Power Dissipation
31
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal Resistance Junction-case
Max.
4.0
℃/W
Rthj-amb
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data & specifications subject to change without notice
201024032
AP20N03S/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.037
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=10A
-
-
52
mΩ
VGS=4.5V, ID=8A
-
-
85
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=10A
-
3
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=24V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=10A
-
6.1
-
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VGS=0V, ID=250uA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
1.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
4
-
nC
VDS=15V
-
4.9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=20A
-
29
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
14.3
-
ns
tf
Fall Time
RD=0.75Ω
-
3.6
-
ns
Ciss
Input Capacitance
VGS=0V
-
290
-
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Min.
Typ.
-
-
20
A
-
-
60
A
-
-
1.3
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
2
Forward On Voltage
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
1
Tj=25℃, IS=20A, VGS=0V
Max. Units
AP20N03S/P
70
50
T C =150 o C
o
T C =25 C
60
V G =10V
V G =10V
50
V G =8.0V
40
V G =6.0V
V G =8.0V
ID , Drain Current (A)
ID , Drain Current (A)
40
30
20
V G =4.0V
30
V G =6.0V
20
V G =4.0V
10
V G =3.0V
V G =3.0V
10
0
0
0
1
2
3
4
5
6
7
8
9
0
1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
5
6
7
Fig 2. Typical Output Characteristics
1.8
85
I D =10A
I D =10A
80
1.6
o
V G =10V
T C =25 C
75
Normalized RDS(ON)
70
RDSON (mΩ )
2
V DS , Drain-to-Source Voltage (V)
65
60
55
50
1.4
1.2
1
45
0.8
40
35
0.6
3
4
5
6
7
8
9
10
11
-50
V GS (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
4. Normalized On-Resistance
v.s. Junction Temperature
3
100
10
2
VGS(th) (V)
IS (A)
T j = 150 o C
T j = 25 o C
1
1
0.1
0
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
T j , Junction Temperature(
100
o
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP20N03S/P
12
f=1.0MHz
1000
I D =10A
V D =16V
V D =20V
V D =24V
8
Ciss
C (pF)
VGS , Gate to Source Voltage (V)
10
6
Coss
100
Crss
4
2
0
10
0
2
4
6
8
10
12
1
6
11
Q G , Total Gate Charge (nC)
16
21
26
31
V DS (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
DUTY=0.5
Normalized Thermal Response (Rthjc)
ID (A)
100us
1ms
10
10ms
T c =25 o C
Single Pulse
0.2
0.1
0.1
0.05
PDM
t
0.02
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
100ms
DC
1
1
10
0.01
100
0.00001
0.0001
0.001
V DS (V)
0.01
0.1
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
RD
VDS
D
RG
VDS
TO THE
OSCILLOSCOPE
0.8x RATED VDS
G
0.5x RATED
G
VGS
+
S
10V
TO THE
OSCILLOSCOPE
D
S
+
1
t , Pulse Width (s)
VGS
-
Fig 11. Switching Time Circuit
1~ 3 mA
IG
ID
Fig 12. Gate Charge Circuit