AP9918H/J Advanced Power Electronics Corp. ▼ Low on-resistance N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Capable of 2.5V gate drive ▼ Low drive current BVDSS 20V RDS(ON) 14mΩ ID 45A G ▼ Surface mount package S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D TO-251(J) S Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ± 12 V ID@TC=25℃ Continuous Drain Current, VGS @ 4.5V 45 A ID@TC=125℃ Continuous Drain Current, VGS @ 4.5V 20 A 1 IDM Pulsed Drain Current 140 A PD@TC=25℃ Total Power Dissipation 48 W Linear Derating Factor 0.38 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Unit Rthj-c Thermal Resistance Junction-case Max. 2.6 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice 200227032 AP9918H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 20 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=18A - - 14 mΩ VGS=2.5V, ID=9A - - 28 mΩ 0.5 - 1.2 V VDS=10V, ID=18A - 26 - S VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=125 C) VDS=20V ,VGS=0V - - 25 uA Gate-Source Leakage VGS= ± 12V - - ±100 nA ID=18A - 19 - nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance VGS=0V, ID=250uA VDS=VGS, ID=250uA o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=20V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=5V - 10.5 - nC VDS=10V - 7.5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=18A - 83 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 18 - ns tf Fall Time RD=0.56Ω - 23 - ns Ciss Input Capacitance VGS=0V - 500 - pF Coss Output Capacitance VDS=20V - 310 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 125 - pF Min. Typ. - - 45 A - - 140 A - - 1.3 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=1.3V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 2 Forward On Voltage Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 1 Tj=25℃, IS=45A, VGS=0V Max. Units AP9918H/J 120 80 V G =4.5V o T C =25 C T C =150 o C V G =4.5V V G =4.0V V G =3.5V 60 ID , Drain Current (A) ID , Drain Current (A) V G =4.0V 80 V G =3.5V V G =3.0V 40 V G =2.5V V G =3.0V 40 V G =2.5V 20 0 0 0 1 2 3 4 0 V DS , Drain-to-Source Voltage (V) 1 2 3 4 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 26 I D = 18 A 24 I D =18A o 1.6 T C =25 C V G =4.5V Normalized R DS(ON) 22 RDS(ON) (mΩ ) 20 18 16 1.4 1.2 1.0 14 0.8 12 10 0.6 1 2 3 4 5 6 V GS (V) Fig 3. On-Resistance v.s. Gate Voltage -50 0 50 100 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 AP9918H/J 50 60 50 40 30 PD (W) ID , Drain Current (A) 40 30 20 20 10 10 0 0 25 50 75 100 125 0 150 50 100 150 T c , Case Temperature ( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1 1000 Normalized Thermal Response (R thjc) DUTY=0.5 100 ID (A) 10us 100us 10 1ms 10ms T c =25 o C Single Pulse 0.2 0.1 0.1 0.05 0.02 PDM SINGLE PULSE t 0.01 T Duty factor = t/T Peak Tj = P DM x Rthjc + TC 100ms 1 0.01 1 10 V DS (V) Fig 7. Maximum Safe Operating Area 100 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 8. Effective Transient Thermal Impedance AP9918H/J 12 f=1.0MHz 10000 I D =18A V DS =10V VGS , Gate to Source Voltage (V) 10 V DS =15V V DS =20V 8 1000 C (pF) Ciss 6 4 Coss 100 Crss 2 0 10 0 5 10 15 20 25 30 35 1 5 9 13 17 21 25 29 V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 1.6 100 1.4 10 1.2 T j =150 o C VGS(th) (V) IF (A) T j =25 o C 1 1 0.8 0.6 0.1 0.4 0.01 0.2 0 0.4 0.8 1.2 V SD (V) Fig 11. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 Junction Temperature ( o C ) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 150 AP9918H/J VDS 90% RD VDS D RG TO THE OSCILLOSCOPE 0.5x RATED VDS G + 10% VGS S 5v VGS - td(on) Fig 13. Switching Time Circuit tr td(off) tf Fig 14. Switching Time Waveform VG VDS D 5V RATED VDS G S QG TO THE OSCILLOSCOPE QGS QGD VGS + I G I D Charge Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Q