APA2N70K
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
D
▼ Repetitive Avalanche Rated
▼ Fast Switching
S
D
▼ Simple Drive Requirement
SOT-223
BVDSS
675V
RDS(ON)
10Ω
ID
0.2A
G
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
675
V
VGS
Gate-Source Voltage
± 30
V
ID@TC=25℃
Continuous Drain Current, VGS @ 5V
0.2
A
ID@TC=100℃
Continuous Drain Current, VGS @ 5V
0.13
A
1
IDM
Pulsed Drain Current
0.5
A
PD@TC=25℃
Total Power Dissipation
1.13
W
0.01
W/℃
0.5
mJ
1
A
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
0.5
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data & specifications subject to change without notice
Max.
Value
Unit
110
℃/W
201130020
APA2N70K
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
675
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.52
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=0.2A
-
-
8
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS=5V, ID=0.2A
-
-
10
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=0.2A
-
0.4
-
S
VDS=675V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=540V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ± 30V
-
-
±100
nA
ID=0.2A
-
5.5
-
nC
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
VGS=0V, ID=1mA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=540V
-
1.9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
0.5
-
nC
VDS=300V
-
7.7
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=0.2A
-
3.6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
24
-
ns
tf
Fall Time
RD=1500Ω
-
44
-
ns
Ciss
Input Capacitance
VGS=0V
-
286
-
pF
Coss
Output Capacitance
VDS=25V
-
25
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Min.
Typ.
-
-
0.2
A
-
-
0.5
A
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode ) 1
VSD
3
Forward On Voltage
Test Conditions
VD=VG=0V , VS=1.2V
Tj=25℃, IS=0.2A, VGS=0V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=1A.
3.Pulse width <300us , duty cycle <2%.
Max. Units
APA2N70K
0.8
1
10V
5.5V
5.0V
T C =25 o C
0.6
ID , Drain Current (A)
0.75
ID , Drain Current (A)
10V
5.0V
4.5V
T C =150 o C
0.5
4.5V
0.4
V GS =4.0V
0.2
0.25
V GS =4.0V
0
0
0
3
6
9
0
12
6
12
18
24
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
1.2
I D =0.2A
V GS =10V
2.4
1.1
Normalized R DS(ON)
Normalized BVDSS (V)
2
1
1.6
1.2
0.8
0.9
0.4
0
0.8
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
-50
0
50
100
o
T j , Junction Temperature ( C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
0.24
1.6
0.18
1.2
PD (W)
ID , Drain Current (A)
APA2N70K
0.12
0.06
0.8
0.4
0
0
25
50
75
100
125
150
0
50
T c , Case Temperature ( o C )
100
150
Tc, Case Temperature ( o C )
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
Normalized Thermal Response (R thja)
1
1ms
ID (A)
0.1
10ms
0.01
100ms
T C =25 o C
Single Pulse
Duty Factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthja+ Ta
1s
10s
0.001
0.01
1
10
100
1000
V DS (V)
Fig 7. Maximum Safe Operating Area
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
APA2N70K
f=1.0MHz
1000
16
I D =0.2A
Ciss
12
100
C (pF)
VGS , Gate to Source Voltage (V)
V DS =540V
8
Coss
10
Crss
4
0
1
0
2
4
6
8
1
10
19
28
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
4
1
3.5
0.1
VGS(th) (V)
T j = 25 o C
IS (A)
T j = 150 o C
3
0.01
2.5
0.001
2
0
0.3
0.6
0.9
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
APA2N70K
VDS
90%
RD
VDS
D
0.44 x RATED
G
RG
TO THE
OSCILLOSCOPE
10%
+
S
10 V
VGS
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
10V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q