AP9T18GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼ Low Gate Charge
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Capable of 2.5V gate drive
20V
RDS(ON)
14mΩ
ID
▼ Surface mount package
G
▼ RoHS Compliant
BVDSS
38A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G D
S
TO-252(H)
G
D
TO-251(J)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±16
V
ID@TC=25℃
Continuous Drain Current, V GS @ 4.5V
38
A
ID@TC=100℃
Continuous Drain Current, V GS @ 4.5V
24
A
140
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
31.3
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
200908052-1/4
AP9T18GH/J
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.1
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=18A
-
-
14
mΩ
VGS=2.5V, ID=9A
-
-
28
mΩ
0.5
-
1.5
V
VDS=5V, ID=18A
-
33
-
S
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=16V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±16V
-
-
±100
nA
ID=18A
-
16
25
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=VGS, ID=250uA
o
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
VGS=0V, ID=250uA
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
12
-
ns
tr
Rise Time
ID=18A
-
80
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
22
-
ns
tf
Fall Time
RD=0.56Ω
-
12
-
ns
Ciss
Input Capacitance
VGS=0V
-
1115 1790
pF
Coss
Output Capacitance
VDS=20V
-
280
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
220
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.54
-
Ω
Min.
Typ.
IS=18A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=18A, VGS=0V,
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP9T18GH/J
90
120
5.0V
4.5V
o
T C =25 C
100
5.0V
4.5V
o
T C =25 C
80
ID , Drain Current (A)
ID , Drain Current (A)
70
80
3.5V
60
40
2.5V
60
3.5V
50
40
30
2.5V
20
20
V G =1.5V
10
V G =1.5V
0
0
0
1
2
3
0
4
2
3
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
26
1.6
I D =9A
I D =18A
V G =4.5V
1.4
T C =25 o C
Normalized RDS(ON)
22
RDS(ON) (mΩ )
1
V DS , Drain-to-Source Voltage (V)
18
1.2
1.0
14
0.8
10
0.6
0
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
10
8
Normalized VGS(th) (V)
1.5
IS(A)
6
T j =25 o C
T j =150 o C
4
1
0.5
2
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9T18GH/J
I D =18A
10
V DS =10V
V DS =12V
V DS =16V
8
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
12
6
C iss
1000
4
C oss
C rss
2
0
100
0
5
10
15
20
25
30
35
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
100
ID (A)
100us
1ms
10
10ms
100ms
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4