AP3303H/J
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching
BVDSS
25V
RDS(ON)
25mΩ
ID
G
28A
S
Description
G
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP3303J) is available for low-profile applications.
G
D
D S
TO-252(H)
S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
± 20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
28
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
18
A
1
IDM
Pulsed Drain Current
130
A
PD@TC=25℃
Total Power Dissipation
31
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal Resistance Junction-case
Max.
4.0
℃/W
Rthj-amb
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
200811031
AP3303H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
25
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=20A
-
-
25
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=20A
-
20
-
S
VDS=25V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=20V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=20A
-
14.5
24
nC
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS= 20V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
8.5
-
nC
VDS=15V
-
8.8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=20A
-
65
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
11
-
ns
tf
Fall Time
RD=0.75Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
340
540
pF
Coss
Output Capacitance
VDS=25V
-
250
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
98
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=20A, VGS=0V
-
-
1.5
V
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
30.5
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
29
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP3303H/J
80
90
T c =25 o C
80
70
10V
ID , Drain Current (A)
9.0V
70
ID , Drain Current (A)
T c =150 o C
10V
60
8.0V
50
40
7.0V
30
60
9.0V
50
8.0V
40
30
7.0V
20
20
V G =5.0V
V G =5.0V
10
10
0
0
0
2
4
6
8
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
50
1.8
I D =8A
V G =10V
ID=8A
1.6
o
T C =25 C
Normalized RDS(ON)
RDS(ON) (mΩ )
40
30
1.4
1.2
1.0
20
0.8
0.6
10
5
6
7
8
9
10
-50
11
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
5
4.5
10
VGS(th) (V)
IS (A)
4
1
T j =150 o C
T j =25 o C
3.5
3
0.1
2.5
0.01
2
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
T j ,Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP3303H/J
f=1.0MHz
10000
16
I D =20A
V DS =12V
V DS =16V
V DS =20V
12
10
1000
C (pF)
VGS , Gate to Source Voltage (V)
14
8
Ciss
Coss
6
100
Crss
4
2
10
0
0
4
8
12
16
1
20
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
ID (A)
100
10ms
10
100ms
T c =25 o C
Single Pulse
1s
DC
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q