2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features • High Output Power: 32.0␣ dBm Typical P 1 dB at 4␣ ␣ GHz • High Gain at 1 dB Compression: 8.5␣ dB Typical G 1 dB at 4␣ GHz • High Power Efficiency: 35% Typical at 4␣ GHz • Hermetic Metal-Ceramic Stripline Package Description The ATF-44101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range. This nominally .5␣ micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between source fingers. Total gate periphery is 5 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 100 mil Flange This device is suitable for applications in space, airborne, military ground and shipboard, and commercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and minimum thermal resistance. Electrical Specifications, TA = 25°C Symbol P1 dB Parameters and Test Conditions Units Min. Typ. Max. 32.0 31.5 8.5 5.5 f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 6.0 GHz dBm 31.0 G1 dB Power Output @ 1 dB Gain Compression: VDS =9 V, IDS = 500 mA 1 dB Compressed Gain: VDS = 9 V, IDS = 500 mA dB 7.5 ηadd Efficiency @ P1dB: VDS = 9 V, IDS = 500 mA f = 4.0 GHz % 35 gm Transconductance: VDS = 2.5 V, IDS = 500 mA mmho 300 IDSS Saturated Drain Current: VDS = 1.75 V, VGS = 0 V VP Pinch-off Voltage: VDS = 2.5 V, IDS = 25 mA 5-89 mA 800 1300 1500 V -5.4 -4.0 -2.0 5965-8727E ATF-44101 Absolute Maximum Ratings Symbol VDS VGS VGD I DS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25°C. 3. Derate at 43 mW/°C for TCASE > 25°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section for more information. Absolute Maximum [1] +14 -7 -16 IDSS 6.5 175 -65 to +175 Units V V V mA W °C °C θjc = 23°C/W; TCH = 150°C 1␣ µm Spot Size[4] Thermal Resistance: Liquid Crystal Measurement: ATF-44101 Typical Performance, TA = 25°C 35 16 33 25 30 4 30 29 2.0 4.0 6.0 0 8.0 FREQUENCY (GHz) Figure 1. Power Output @ 1 dB Gain Compression and 1 dB Compressed Gain vs. Frequency. VDS = 9V, IDS = 500 mA. 40 15 30 10 20 5 10 0 0 0 5 10 15 20 25 30 PIN (dBm) Figure 2. Output Power and Power Added Efficiency vs. Input Power. VDS = 9 V, IDS = 500 mA, f = 4 GHz. 5-90 GAIN (dB) G1 dB 20 ηadd (%) 8 31 25 POUT (dBm) P1 dB (dBm) 20 12 G1 dB (dBm) P1 dB 32 15 MSG 10 5 0 1.0 |S21|2 2.0 4.0 6.0 8.0 12.0 FREQUENCY (GHz) Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 9 V, IDS = 500 mA. Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 9 V, IDS␣ =␣ 500 mA Freq. GHz 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 Mag. .88 .87 .87 .87 .88 .88 .89 .89 .88 .86 .81 .77 S11 Ang. -125 -161 -178 168 153 136 122 114 109 103 91 74 dB 13.4 8.1 4.8 2.5 0.8 -0.8 -2.5 -4.2 -5.5 -6.7 -6.9 -7.5 S21 Mag. 4.69 2.53 1.73 1.34 1.10 .91 .75 .62 .53 .46 .45 .42 Ang. 104 74 54 35 16 -5 -25 -39 -52 -64 -78 -95 A model for this device is available in the DEVICE MODELS section. 100 mil Flange Dimensions .05 R, TYP 1.3 SOURCE 4 .42 .265 10.7 6.73 GATE DRAIN 1 3 .062 DIA. 1.57 (2) PLCS .12 3.0 SOURCE 2 .03 0.8 0.025 ± 0.003 mils 0.64 ± 0.08 mm .044 1.12 .06 1.6 .100 2.54 .300 min .004 ± .002 .10 ± .05 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 Package marking code is 441 5-91 dB -28.2 -26.7 -26.7 -25.7 -25.5 -23.6 -23.4 -22.7 -22.2 -20.9 -19.3 -17.2 S12 Mag. .039 .046 .046 .052 .053 .066 .068 .073 .078 .090 .108 .138 S22 Ang. 31 21 22 17 13 0 -7 -13 -18 -24 -33 -49 Mag. .29 .38 .44 .47 .49 .52 .56 .62 .68 .72 .73 .73 Ang. -154 -164 -167 -175 175 160 144 132 124 118 112 101