BFQ34 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BFQ34 is primarily designed for driver and final stages in MATV system amplifier up to 4.0 GHz. PACKAGE STYLE .280 4L STUD A 45° FEATURES: C • PG = 12 dB min. at 3 W/ 400 MHz • ηC = 50% min. at 3W/ 400 MHz • Omnigold™ Metallization System • Diffused Emitter-Ballasting resistors E B E B C D J E I F MAXIMUM RATINGS G H K 150 mA IC #8-32 UNC DIM MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 MAXIMUM VCBO 25 V B .220 / 5.59 .230 /5.84 VCEO 18 V C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 PDISS 2.7 W @ TC = 160 °C E .117 / 2.97 TJ -65 °C to +200 °C .130 / 3.30 G .245 / 6.22 H -65 °C to +150 °C θJC 15 K/W CHARACTERISTICS .255 / 6.48 .640 / 16.26 I TSTG .137 / 3.48 .572 / 14.53 F J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 20 mA 18 V BVCBO IC = 5.0 mA 25 V BVEBO IE = 5.0 mA 2.0 V ICBO VCB = 15 V hFE 100 VCE = 15 V IC = 75 mA 25 70 VCE = 15 V IC = 150 mA 25 70 Cc VCB = 15 V GUM F VCE = 15 V IC = 120 mA f = 1.0 MHz 2.0 f = 500 MHz 16.3 8.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are Subject to change without notic. µA --- 2.75 pF dB dB REV. A 1/1