STK830P Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=500V(Min.) Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.5Ω(Max.) Ordering Information Type NO. Marking Package Code STK830 TO-220AB-3L STK830P Outline Dimensions unit : mm Φ3.90 Max. 8.50~8.90 1.17~1.37 1.17 Min. 0.88 Max. 2.54 Typ. 2.54 Typ. 1 2 0.43 Max. 3 2.87 Max. 4.50~4.70 12.16~12.36 3.14 Typ. 13.50~13.90 28.50~29.10 14.90~15.30 9.80~10.20 KSD-T0P009-000 PIN Connections 1. Gate 2. Drain 3. Source 1 STK830P Absolute maximum ratings (Tc=25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V TC=25℃ 4.5 A TC=100℃ 2.7 A Drain current (DC) ID * IDM 18 A Drain power dissipation PD 71 W Drain current (Pulsed) Avalanche current (Single) ② IAS 4.5 A Single pulsed avalanche energy ② EAS 250 mJ Avalanche current (Repetitive) ① IAR 4.5 A Repetitive avalanche energy ① EAR 5.0 mJ TJ 150 °C Tstg -55~150 °C Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Symbol Typ. Max Junction-case Rth(J-C) - 1.75 Junction-ambient Rth(J-A) - 62.5 KSD-T0P009-000 Unit ℃/W 2 STK830P Electrical Characteristics (Tc=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit V(BR)DSS ID=250 ㎂, VGS=0V 500 - - V VGS(th) ID=250 ㎂, VGS=5V 2.0 - 4.0 V Drain-source cut-off current IDSS VDS=500V, VGS=0V - - 10 ㎂ Gate leakage current IGSS VDS=0V, VGS=±30V - - ±100 ㎁ Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance ④ RDS(on) VGS=10V, ID=2.25A - - 1.5 Ω Forward transfer conductance ④ gfs VDS=10V, ID=2.25A - 3.3 - S - 550 830 - 46 70 - 8.4 15 - 12 - - 46 - - 50 - - 48 - - 17 26 - 2.6 4.0 - 5.8 9.0 Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time VGS=0V, VDS=25V f=1 MHz VDD=250V, ID=4.5A RG=12Ω tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd ③④ VDS=250V, VGS=10V ID=4.5A ③④ Source-Drain Diode Ratings and Characteristics Characteristic Symbol Source current (DC) IS Test Condition ㎊ ㎱ nC (Tc=25°C) Min Typ Max - - 4.5 - - 18 Unit Source current (Pulsed) ① ISP Integral reverse diode in the MOSFET Forward voltage ④ VSD VGS=0V, IS=4.5A - - 1.4 V Reverse recovery time trr - 188 - ㎱ Reverse recovery charge Qrr IS=4.5A, VGS=0V dIS/dt=100A/㎲ - 2.1 - μC A Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=20mH, IAS=4.5A, VDD=50V, RG=27Ω ③ Pulse Test : Pulse width≤ 400 ㎲, Duty cycle≤ 2% ④ Essentially independent of operating temperature KSD-T0P009-000 3 STK830P Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS 1 Fig. 4 IS - VSD Fig. 3 RDS(on) - ID ` Fig. 6 VGS - QG Fig. 5 Capacitance - VDS ℃ KSD-T0P009-000 4 STK830P Fig. 7 V(BR)DSS - TJ Fig. 8 RDS(on) - TJ ㎂ C C Fig. 10 Safe Operating Area Fig. 9 ID - TC * KSD-T0P009-000 5 STK830P Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Switching Time Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T0P009-000 6 STK830P Fig. 14 Peak Diode Recovery dv/dt Test Circuit & Waveform rr KSD-T0P009-000 7 STK830P The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T0P009-000 8