AUK STK630F

STK630F
Semiconductor
Power MOSFET
Features
• Avalanche rugged technology.
• Low input capacitance.
• Low leakage current : 10 ㎂ (Max.) @ VDS=200V.
• Low RDS(on) : 0.30Ω(Typ.)
Ordering Information
Type NO.
Marking
STK630F
STK630
Package Code
TO-220F-3L
Outline Dimensions
unit : mm
Φ3.05~3.35
3.46 Typ.
9.10~9.30
2.60~3.00
1.07 Min.
0.90 Max.
0.60 Max.
2.54 Typ.
2.54 Typ.
2
3
0.60 Max.
4.70 Max.
1
2.70 Max.
12.20~12.60
12.40~13.00
15.40~15.80
9.80~10.20
KST-H036-002
PIN Connections
1. Gate
2. Drain
3. Source
1
STK630F
Absolute maximum ratings
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Gate-source voltage
VGSS
±30
V
Drain current (DC) *
ID
Drain current (Pulsed) *
IDP
36
A
Drain power dissipation (TC=25℃)
PD
30
W
TC=25℃
9
A
TC=100℃
5.7
A
Single pulsed avalanche energy
②
EAS
162
mJ
Avalanche current (Repetitive)
①
IAR
9
A
Repetitive avalanche energy
①
EAR
7.2
mJ
TJ
150
°C
Tstg
-55~150
°C
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
Thermal Resistance
Characteristic
Symbol
Typ.
Max.
Thermal resistance junction-case
Rth(J-C)
-
4.16
Thermal resistance junction-ambient
Rth(J-A)
-
62.5
KST-H036-002
Units
℃/W
2
STK630F
Electrical Characteristics
Characteristic
(Tc=25°C)
Symbol
Test Condition
Min.
Typ.
Max.
Unit
V(BR)DSS
ID=250 ㎂, VGS=0V
200
-
-
V
VGS(th)
ID=250 ㎂, VDS=VGS
2.0
-
4.0
V
Drain-source cut-off current
IDSS
VDS=200V, VGS=0V
-
-
10
㎂
Gate leakage current
IGSS
VDS=0V, VGS=±30V
-
-
±100
㎁
RDS(on)
VGS=10V, ID=4.5A
③
-
-
0.4
Ω
Forward transfer conductance
gfs
VDS=40V, ID=4.5A
③
-
3.87
-
S
Input capacitance
Ciss
-
550
-
Output capacitance
Coss
-
110
-
Reverse transfer capacitance
Crss
-
40
-
Turn-on delay time
td(on)
-
13
-
-
13
-
-
30
-
-
18
-
-
22
-
-
4.3
-
-
10.9
-
Drain-source breakdown voltage
Gate threshold voltage
Static drain-source on-resistance
Rise time
VGS=0V, VDS=25V
f=1 ㎒
VDD=100V, ID=9A
RG=12Ω
Fig 13.
tr
Turn-off delay time
td(off)
Fall time
tf
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
③④
VDS=160V, VGS=10V,
ID=9A
Fig 12.
③④
Source-Drain Diode Ratings and Characteristics
Characteristic
Symbol
Source current (DC)
IS
Source current (Pulsed)
①
ISP
Diode forward voltage
④
VSD
VGS=0V, IS=9A
trr
Is=9A, VGS=0V
dIS/dt=50A/㎲
Reverse recovery time
Reverse recovery charge
Qrr
㎱
nC
(Tc=25°C)
Test Condition
Integral reverse diode
in the MOSFET
㎊
④
Min
Typ
Max
Units
-
-
9
-
-
36
-
-
1.5
V
-
300
-
ns
-
0.87
-
uC
A
Note ;
① Repetitive rating : Pulse width limited by maximum junction temperature
② L=3mH, IAS=9A, VDD=50V, RG=27Ω , starting TJ=25℃
③ Pulse Test : Pulse Width≤ 400 ㎲, Duty cycle≤ 2%
④ Essentially independent of operating temperature
KST-H036-002
3
STK630F
Electrical Characteristic Curves
Fig. 1 ID - VDS
Fig. 2 ID - VGS
Fig. 3 RDS(on) - ID
Fig. 4 IS - VSD
Fig. 5 VGS - QG
Fig. 6 Capacitance - VDS
㎒
KST-H036-002
4
STK630F
Fig. 8 RDS(on) - TJ
Fig. 7 V(BR)DSS - TJ
㎂
C
C
Fig. 10 Safe operating Area
Fig. 9 ID - TC
Fig. 11 Thermal Response
㎲
㎲
㎳
㎳
KST-H036-002
㎳
5
STK630F
Fig. 12 Gate Charge Test Circuit & Waveform
Fig. 13 Switching Time Test Circuit & Waveform
Fig. 14 EAS Test Circuit & Waveform
KST-H036-002
6
STK630F
Fig. 15 Peak Diode Recovery dv/dt Test Circuit & Waveform
KST-H036-002
7
STK630F
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
KST-H036-002
8