STK630F Semiconductor Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Low leakage current : 10 ㎂ (Max.) @ VDS=200V. • Low RDS(on) : 0.30Ω(Typ.) Ordering Information Type NO. Marking STK630F STK630 Package Code TO-220F-3L Outline Dimensions unit : mm Φ3.05~3.35 3.46 Typ. 9.10~9.30 2.60~3.00 1.07 Min. 0.90 Max. 0.60 Max. 2.54 Typ. 2.54 Typ. 2 3 0.60 Max. 4.70 Max. 1 2.70 Max. 12.20~12.60 12.40~13.00 15.40~15.80 9.80~10.20 KST-H036-002 PIN Connections 1. Gate 2. Drain 3. Source 1 STK630F Absolute maximum ratings Characteristic Symbol Rating Unit Drain-source voltage VDSS 200 V Gate-source voltage VGSS ±30 V Drain current (DC) * ID Drain current (Pulsed) * IDP 36 A Drain power dissipation (TC=25℃) PD 30 W TC=25℃ 9 A TC=100℃ 5.7 A Single pulsed avalanche energy ② EAS 162 mJ Avalanche current (Repetitive) ① IAR 9 A Repetitive avalanche energy ① EAR 7.2 mJ TJ 150 °C Tstg -55~150 °C Junction temperature Storage temperature range * Limited by maximum junction temperature Thermal Resistance Characteristic Symbol Typ. Max. Thermal resistance junction-case Rth(J-C) - 4.16 Thermal resistance junction-ambient Rth(J-A) - 62.5 KST-H036-002 Units ℃/W 2 STK630F Electrical Characteristics Characteristic (Tc=25°C) Symbol Test Condition Min. Typ. Max. Unit V(BR)DSS ID=250 ㎂, VGS=0V 200 - - V VGS(th) ID=250 ㎂, VDS=VGS 2.0 - 4.0 V Drain-source cut-off current IDSS VDS=200V, VGS=0V - - 10 ㎂ Gate leakage current IGSS VDS=0V, VGS=±30V - - ±100 ㎁ RDS(on) VGS=10V, ID=4.5A ③ - - 0.4 Ω Forward transfer conductance gfs VDS=40V, ID=4.5A ③ - 3.87 - S Input capacitance Ciss - 550 - Output capacitance Coss - 110 - Reverse transfer capacitance Crss - 40 - Turn-on delay time td(on) - 13 - - 13 - - 30 - - 18 - - 22 - - 4.3 - - 10.9 - Drain-source breakdown voltage Gate threshold voltage Static drain-source on-resistance Rise time VGS=0V, VDS=25V f=1 ㎒ VDD=100V, ID=9A RG=12Ω Fig 13. tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd ③④ VDS=160V, VGS=10V, ID=9A Fig 12. ③④ Source-Drain Diode Ratings and Characteristics Characteristic Symbol Source current (DC) IS Source current (Pulsed) ① ISP Diode forward voltage ④ VSD VGS=0V, IS=9A trr Is=9A, VGS=0V dIS/dt=50A/㎲ Reverse recovery time Reverse recovery charge Qrr ㎱ nC (Tc=25°C) Test Condition Integral reverse diode in the MOSFET ㎊ ④ Min Typ Max Units - - 9 - - 36 - - 1.5 V - 300 - ns - 0.87 - uC A Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=3mH, IAS=9A, VDD=50V, RG=27Ω , starting TJ=25℃ ③ Pulse Test : Pulse Width≤ 400 ㎲, Duty cycle≤ 2% ④ Essentially independent of operating temperature KST-H036-002 3 STK630F Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 5 VGS - QG Fig. 6 Capacitance - VDS ㎒ KST-H036-002 4 STK630F Fig. 8 RDS(on) - TJ Fig. 7 V(BR)DSS - TJ ㎂ C C Fig. 10 Safe operating Area Fig. 9 ID - TC Fig. 11 Thermal Response ㎲ ㎲ ㎳ ㎳ KST-H036-002 ㎳ 5 STK630F Fig. 12 Gate Charge Test Circuit & Waveform Fig. 13 Switching Time Test Circuit & Waveform Fig. 14 EAS Test Circuit & Waveform KST-H036-002 6 STK630F Fig. 15 Peak Diode Recovery dv/dt Test Circuit & Waveform KST-H036-002 7 STK630F The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KST-H036-002 8