STC352 Semiconductor NPN Silicon Transistor Descriptions • High current application • Audio power amplifier Features • High current : IC = 2A • Complementary pair with STA353 Ordering Information Type NO. Marking STC352 STC352 Package Code MPT Outline Dimensions unit : mm 1.2 Max. 12.5 Min. 0.70 Max. 0.4~0.6 1 2 3 2.5±0.1. 0.5±0.2 2.0±0.1 5.0±0.2 3.4±0.2 21.5±1.0 1.1±0.1 8.5±0.2 6.5±0.2 KST-B001-000 PIN Connections 1. Emitter 2. Collector 3. Base 1 STC352 (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 40 V Collector-Emitter voltage VCEO 30 V Emitter-Base voltage VEBO 5 V Collector current IC 2 A Emitter Current IE -2 A Collector dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=100µA, IE=0 40 - - V Collector-Emitter breakdown voltage BVCEO IC=10mA, IB=0 30 - - V Emitter-Base breakdown voltage BVEBO IE=1mA, IC=0 5 - - V Collector cut-off current ICBO VCB=40V, IE=0 - - 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 - - 0.1 µA VCE=2V, IC=500mA 100 - 320 - VBE(ON) VCE=2V, IC=500mA - - 1 V VCE(sat)1 IC=2A, IB=0.2A - - 0.8 VCE(sat)2 IC=1.5A, IB=0.03A - - 2 fT VCE=5V, IC=500mA - 120 - MHz VCB=10V, IE=0, f=1MHz - 13 - pF DC current gain Base-Emitter on voltage Collector-Emitter saturation voltage Transition frequency Collector output capacitance hFE * Cob V * : hFE rank / O : 100~200, Y : 160~320 KST-B001-000 2 STC352 Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 3 fT - IC Fig. 2 VCE(sat) - IC Fig. 4 COb - VR KST-B001-000 3