STS9013 Semiconductor NPN Silicon Transistor Descriptions • General purpose application. • Switching application. Features • Excellent hFE linearity. • Complementary pair with STS9012 Ordering Information Type NO. STS9013 Marking Package Code STS9013 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 2.06±0.1 14.0±0.40 0.4±0.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Emitter 2. Base 3. Collector 0.38 1.20±0.1 1 2 3 KST-9016-000 1 STS9013 (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 40 V Collector-Emitter voltage VCEO 30 V Emitter-Base voltage VEBO 5 V Collector current IC 500 mA Emitter current IE -500 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector cut-off current ICBO VCB=35, IE=0 - - 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 - - 0.1 µA 96 - 246 - IC=100mA, IB=10mA - 0.1 0.25 V IC=100mA, VCE=1V - 0.8 1 V 140 - - MHz - 7.0 - pF DC current gain Collector-Emitter saturation voltage hFE * VCE(sat) Base-Emitter voltage VBE Transition frequency fT Collector output capacitance * : hFE Rank / Cob VCE=1V, IC=50mA VCE=6V, IC=20mA VCB=6V, IE=0, f=1MHz F : 96~135, G : 118~166, H : 144~202, I : 176~246. KST-9016-000 2 STS9013 Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 2 IC - VBE Fig. 3 IC - VCE Fig. 4 VCE(SAT) - IC Fig. 5 hFE - IC KST-9016-000 3