@vic AV13005 TO-220 NPN SILICON POWER TRANSISTOR AV13005 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM : 4.0 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO Ic= 1000μA， IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA， IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1000μA， IC=0 9 V Collector cut-off current ICBO VCB= 700 V IE=0 1000 μA Collector cut-off current ICEO VCE= 400 V IB=0 100 μA Emitter cut-off current IEBO VEB= 9 V， IC=0 1000 μA DC current gain HFE（2） VCE= 5V, IC = 1000 mA Collector-emitter saturation voltage VCE(sat) IC= 2000 mA, IB= 500 mA 0.6 V Base-emitter saturation voltage VBE(sat) IC= 2000mA, IB= 500mA 1.6 V Transition frequency fT Fall time TF Storage time TS MAX 10 UNIT 40 VCE= 10 V, IC= 500 mA 5 f =1MHz MHz 0.9 IB1 = - IB2 =0.4A, IC =2A VCC =120V μS 4.0 CLASSIFICATION OF HFE(2) Rank Range A B1 B2 C D E 10-15 15-20 20-25 25-30 30-35 35-40 Copyright © Avic Electronics Corp. 1 Website: http://www.avictek.com @vic AV13005 h EF - DC Current Gain 100 TJ =150 °C 70 50 25 °C 30 20 -55 °C 10 VCE = 2V VCE = 5V 7 5 0.04 0.06 0.1 0.2 0.4 0.6 4 2 1 VCE - Collector-Emitter Voltage (V) Typical Characteristics 2.0 TJ =25 °C 1.6 IC =1A 0 0.03 0.05 0.55 TJ =-55 °C 25 °C 0.7 25 °C 150 °C 0.3 0.04 0.06 0.1 0.2 0.4 0.6 1 2 IC/IB = 4 0.45 0.15 1 50°C 25°C -0.2 0.4 0.6 1 4 2 2k 0.1 -0.4 0.2 Figure 4. Collector–Emitter Saturation V l C,Capacitance (pF) IC- Collector Current (µA) 10 125°C 100°C 75°C 150 °C IC, COLLECTOR CURRENT (AMP) TJ =150°C 100 25 °C 0.25 0.05 0.04 0.06 0.1 4 VCE =250V 1k TJ =-55 °C 0.35 IC, COLLECTOR CURRENT (AMP) Figure 3. Base–Emitter Voltage 10k 2 3 Figure 2. Collector Saturation R i VBE(sat) @ IC/IB = 4 VBE(on) @ VCE = 2 0.5 0.2 0.3 0.5 0.7 1 0.1 IB, BASE CURRENT (AMP) VCE(sat) - Collector-Emitter Satlration Voltage (V) VBE - Base-Emitter Voltage (V) 0.9 4A 0.4 Figure 1. DC Current Gain 1.1 3A 0.8 IC, COLLECTOR CURRENT (AMP) 1.3 2A 1.2 0 +0.2 +0.4 +0.6 VBE, BASE–EMITTER VOLTAGE 100 70 50 30 20 Cob 0.3 0.5 1 3 5 10 30 50 100 300 VR Reverse Voltage Figure 5. Collector Cutoff Region Copyright © Avic Electronics Corp. Cib 1k 700 500 300 200 Figure 6. Capacitance 2 Website: http://www.avictek.com