WINNERJOIN KTB1366

RoHS
KTB1366
TO-220F
KTB1366
D
T
,. L
1. BASE
TRANSISTOR (PNP)
2. COLLECTOR
FEATURES
Power dissipation
3. EMITTER
PCM:
2
W (Tamb=25℃)
123
Collector current
ICM:
-3
A
Collector-base voltage
V(BR)CBO:
-60
V
Operating and storage junction temperature range
IC
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
O
Test
R
T
V(BR)CBO
N
unless otherwise specified)
Symbol
Collector-base breakdown voltage
C
O
conditions
MIN
TYP
MAX
UNIT
Ic=-1mA, IE=0
-60
V
Ic=-50mA, IB=0
-60
V
IE=-1mA, IC=0
-7
V
VCE(sat)
IC=-2A, IB=-0.2A
-1
V
Base-emitter voltage
C
E
L
VBE
VCE=-5V, IC=-0.5A
-1
V
Transition frequency
fT
VCE=-5V, IC=-0.5A
9
MHz
Cob
VCB=-10V, IE=0, f=1MHz
150
pF
Fall time
tf
IC=-2A, IB1=-IB2=-0.2A
0.5
µs
Storage time
ts
1.7
µs
Collector cut-off current
Emitter cut-off current
DC current gain
E
Collector-emitter saturation voltage
J
E
Collector output capacitance
W
ICBO
VCB=-60V, IE=0
-100
µA
IEBO
VEB=-7V, IC=0
-100
µA
hFE(1)
VCE=-5V, IC=-0.5A
60
hFE(2)
VCE=-5V, IC=-3A
20
200
VCC=-30V
CLASSIFICATION OF hFE(1)
Rank
Range
O
Y
60-120
100-200
Marking
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