RoHS 3DD13003 3DD13003 TRANSISTOR (NPN) PCM: 1.25 W (Tamb=25℃) 1. BASE Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 700 V Operating and storage junction temperature range 2. COLLECTOR 3. EMITTER TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter D T ,. L TO-126 FEATURES Power dissipation Symbol C 123 IC O unless otherwise specified) Test N conditions Collector-base breakdown voltage V(BR)CBO Ic= 1000µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage O MIN TYP MAX UNIT 700 V Ic= 10mA, IB=0 400 V V(BR)EBO IE= 1000µA, IC=0 9 V ICBO VCB= 700V, IE=0 1000 µA ICEO VCE= 400V, IB=0 500 µA IEBO VEB= 9V, IC=0 1000 µA HFE(1) VCE= 2V, IC= 0.5 A 8 HFE(2) VCE= 10V, IC= 0.5 mA 5 Collector-emitter saturation voltage VCE(sat) IC=1000mA,IB= 250 mA 1 V Base-emitter saturation voltage VBE(sat) IC=1000mA, IB= 250mA 1.2 V Base-emitter voltage VBE IE= 2000 mA 3 V Transition frequency fT VCE=10V, Ic=100mA f =1MHz Fall time tf IC=1A, IB1=-IB2=0.2A 0.5 µs Storage time ts VCC=100V 2.5 µs Collector cut-off current C E L Collector cut-off current Emitter cut-off current DC current gain J E R T E W 40 5 MHz CLASSIFICATION OF HFE(1) Rank Range 8-10 10-15 WEJ ELECTRONIC CO. 15-20 20-25 Http:// www.wej.cn 25-30 30-35 35-40 E-mail:[email protected]