@vic MMBTA94 SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Parameter Symbol 2.80±0.05 1.60±0.05 0.35 1.9 0.95±0.025 1.02 Power dissipation PCM : 0.35 W （Tamb=25℃） Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS （ Tamb=25 ℃ otherwise specified） 2.92±0.05 MMBTA94 unless Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR) CBO Ic= -100μA， IE=0 -400 V Collector-emitter breakdown voltage V (BR) CEO IC= -1 mA，IB=0 -400 V Emitter-base breakdown voltage V (BR) EBO IE=-100μA，IC=0 -5 V Collector cut-off current ICBO VCB=-400 V, IE=0 -0.1 μA Collector cut-off current ICEO VCE=-400 V, IB=0 -5 μA Emitter cut-off current IEBO VEB= -4 V, IC=0 -0.1 μA hFE（1） VCE=-10V, IC=-10 mA 80 hFE（2） VCE=-10V, IC=-1mA 70 hFE（3） VCE=-10V, IC=-100 mA 60 VCE (sat) IC=-10 mA，IB=-1mA -0.2 V VCE (sat) IC=-50 mA，IB=-5mA -0.3 V Base-emitter saturation voltage VBE (sat) IC=-10 mA，IB= -1 mA -0.75 V Transition frequency fT DC current gain 300 Collector-emitter saturation voltage VCE=-20V， IC=-10mA f =30MHz 50 MHz MARKING:4D Copyright @vic Electronics Corp. 1 Website http://www.avictek.com