AVICTEK MMBTA44

@vic
MMBTA44
SOT-23-3L Plastic-Encapsulate Transistors
SOT-23-3L
MMBTA44
TRANSISTOR( NPN )
1. BASE
2. EMITTER
3. COLLECTOR
1.02
FEATURES
Parameter
Symbol
2.80±0.05
0.35
unless
Test
otherwise
2.92±0.05
1.60±0.05
1.9
0.95±0.025
Power dissipation
PCM :
0.35 W
(Tamb=25℃)
Collector current
ICM :
0.2 A
Collector-base voltage
V(BR)CBO : 400 V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
specified)
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100μA , IE=0
400
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1
IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,
IC=0
5
V
Collector cut-off current
ICBO
VCB=400 V ,
IE=0
Collector cut-off current
ICEO
VCE=400 V ,
Emitter cut-off current
IEBO
VEB= 4 V ,
HFE(1)
VCE=10V , IC=10 mA
80
HFE(2)
VCE=10V, IC=1mA
70
HFE(3)
VCE=10V ,IC=100 mA
60
VCE(sat)
IC=10 mA, IB=1mA
0.2
V
VCE(sat)
IC=50 mA, IB=5mA
0.3
V
VBE(sat)
IC=10 mA, IB= 1 mA
0.75
V
DC current gain
mA ,
IC=0
0.1
μA
5
μA
0.1
μA
300
Collector-emitter saturation voltage
Base-emitter sataration voltage
VCE=20V, IC=10mA
Transition
frequency
50
fT
MHz
f =30MHz
MARKING:3D
Copyright @vic Electronics Corp.
1
Website http://www.avictek.com