Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SD880 TRANSISTOR (NPN) TO—220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 3. EMITTER 1.5 W (Tamb=25℃) Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO Ic=50mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 7 V Collector cut-off current ICBO VCB=60V, IE=0 100 µA Emitter cut-off current IEBO VEB=7V, IC=0 100 µA DC current gain hFE VCE=5V, IC=500mA VCE (sat) IC=3A, IB=300mA 1 V VBE IC=0.5A, VCE= 5V 1 V Collector-emitter saturation voltage Base-emitter saturation voltage f Transition Frequency Collector output capacitance T Cob Turn on time ton Storage time ts Fall time t 60 300 VCE=5 V, IC=500mA 3 MHz VCE=10V, IE=0, f=1MHz 70 pF 0.8 µs 1.5 µs 0.8 µs IB1=-IB2=0.2A, IC=2A VCC=30V, PW=20µs f CLASSIFICATION OF hFE Rank O Y GR Range 60-120 100-200 150-300