@vic AV966 TO-92MOD Plastic-Encapsulate Transistors AV966 ＴＯ－９２ＭＯＤ TRANSISTOR（ PNP ） 1.EMITTER FEATURE Power dissipation PCM : 0.9 W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -30 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol 2.COLLECTOR 3.BASE １２３ unless Test otherwise conditions specified） MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -1mA ， IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -1mA， IC=0 -5 V Collector cut-off current ICBO VCB= -30 V , IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V , -0.1 μA DC current gain hFE（1） VCE=-2 V, IC= -500mA Collector-emitter saturation voltage VCE(sat) IC= -1.5 A, IB= -0.03A -2 V -1 V IC=0 Base-emitter voltage VBE IC= -500 mA, VCE= -2V Transition frequency f VCE= -2 V, IC= -500mA T 100 320 100 MHz CLASSIFICATION OF h FE(1) Rank O Y Range 100-200 160-320 Copyright @vic Electronics Corp. 1 Website http://www.avictek.com @vic Copyright @vic Electronics Corp. AV966 2 Website http://www.avictek.com @vic AV966 TO-92MOD PACKAGE OUTLINE DIMENSIONS D E C A A1 D1 φ b1 L b e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 4.700 5.100 0.185 0.201 A1 1.730 2.030 0.068 0.080 b 0.400 0.600 0.016 0.024 b1 0.900 1.100 0.035 0.043 c 0.400 0.500 0.016 0.020 D 5.800 6.200 0.228 0.244 D1 4.000 E 8.400 0.157 8.800 0.331 1.500TYP e 0.346 0.059TYP e1 2.900 3.100 0.114 0.122 L 13.050 13.450 0.514 0.530 1.600 Ö 0.000 Copyright @vic Electronics Corp. 0.380 3 0.063 0.000 0.015 Website http://www.avictek.com