FZT3019 tm NPN General Purpose Amplifier Features 4 • This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. 3 • Sourced from process 12. 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 140 V VEBO Emitter-Base Voltage 7.0 V IC Collector current - Continuous TJ, Tstg Junction and Storage Temperature 1.0 A -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Condition Min. Max. Units V(BR)CEO Collector-Emitter Sustaining Voltage * IC = 30 mA, IB = 0 80 V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 140 V V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 7.0 Vn ICBO Collector Cutoff Current VCB = 90 V, IE = 0 VCB = 90 V, IE = 0, Ta = 150°C 10 10 nA µA IEBO Emitter-Cutoff Current VEB = 5 V, 10 nA On Characteristics hFE DC Current Gain IC = 0.1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V IC = 1.0 A, VCE = 10 V 50 90 100 50 15 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.2 0.5 V V VBE(sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA 1.1 V Small Signal Characteristics fT Current Gain - Bandwidth Product IC = 50 mA, VCE = 10 V, f = 20 MHz Ccob Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 100 12 pF Cibo Input Capacitance VBE = 0.5 V, IE = 0, f = 1.0 MHz 60 pF hfe Small Signal current Gain IC = 50 mA, VCE = 10 V, f = 20 MHz rb’Cc Collector Base Time Constant IC = 10 mA, VCB = 10 V, f = 4.0 MHz 400 pS NF Noise Figure IC = 100 mA, VCE = 10 V, RS = 1.0kΩ, f = 1.0KHz 4.0 dB 80 MHz 400 * Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% ©2006 Fairchild Semiconductor Corporation FZT3019 Rev. B 1 www.fairchildsemi.com FZT3019 NPN General Purpose Amplifier April 2006 Symbol PD RθJA* Parameter Total Device Dissipation Derate above 25°C Max. 1.0 8.0 Units W mW/°C Thermal Resistance, Junction to Ambient 125 °C/W NOTES : * Device mounted on FR-4 PCB 36mm × 18mm ×1.5mm, Mounting Pad for the collector lead is 600mm2 2 FZT3019 Rev. B www.fairchildsemi.com FZT3019 NPN General Purpose Amplifier Thermal Characteristics Ta=25°C unless otherwise noted FZT3019 NPN General Purpose Amplifier Package Dimensions 3.00 ±0.10 4.60 ±0.25 6.50 ±0.20 (0.89) (0.95) (0.46) 1.60 ±0.20 2.30 TYP 0.70 ±0.10 (0.95) 7.00 ±0.30 (0.60) +0.04 0.06 –0.02 (0.60) 3.50 ±0.20 1.75 ±0.20 MAX1.80 0.65 ±0.20 0.08MAX SOT-223 ° 10 +0.10 0.25 –0.05 0°~ Dimensions in Millimeters 3 FZT3019 Rev. B www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ 2 E CMOS™ i-Lo™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 4 FZT3019 Rev. B www.fairchildsemi.com FZT3019 NPN General Purpose Amplifier TRADEMARKS