NEC's MEDIUM POWER NPN SILICON HIGH FREQUENCY NE677M04 TRANSISTOR FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 NEC's NE677M04 is housed in NEC's new low profile/flat lead style "M04" package 2 1 1.25 0.650.65 +0.01 +0.30-0.05 (leads 1, 3 and ,4) ELECTRICAL CHARACTERISTICS (TA = 25°C) +0.1 0.59±0.05 2.0±0.1 NEC's NE677M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 15 GHz, the NE677M04 is usable in applications from 100 MHz to 3 GHz. The NE677M04 provides P1dB of 15 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications. R54 DESCRIPTION 2.05±0.1 1.25±0.1 PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base PART NUMBER PACKAGE OUTLINE EIAJ3 REGISTRATION NUMBER DC SYMBOLS NE677M04 M04 2SC5751 UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5V, IE = 0 nA 100 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 100 Current1 hFE DC P1dB Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, Pin = 1 dBm GL RF PARAMETERS AND CONDITIONS 1.30 HIGH LINEAR GAIN: GL = 15.5 dB at 1.8 GHz +0.11-0.05 • 3 HIGH OUTPUT POWER: P-1dB = 15 dBm at 1.8 GHz 0.650.65 • 4 HIGH GAIN BANDWIDTH: fT = 15 GHz +0.30 • Gain at VCE = 3 V, IC = 20 mA Linear Gain at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, Pin = -10 dBm Maximum Available Gain4 at VCE = 3 V, IC = 20 mA, f = 2 GHz MAG |S21E|2 75 120 dBm 15.0 dB 15.5 dBm 16.0 Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz dB ηc Collector Efficiency at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, Pin = 1 dBm % 50 NF Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz, Zs =ZOPT dB 1.7 fT Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz Reverse Transfer Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz Cre 150 10.0 13.5 GHz 15 pF 0.22 2.5 0.50 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the guard pin of capacitance meter. 3. Electronic Industrail Association of Japan |S21| 4. MAG = |S12| (K ± K 2- 1 ). California Eastern Laboratories NE677M04 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) ORDERING INFORMATION SYMBOLS PARAMETERS UNITS RATINGS PART NUMBER QUANTITY NE677M04-T2-A 3k pcs./reel VCBO Collector to Base Voltage V 9.0 VCEO Collector to Emitter Voltage V 6.0 VEBO Emitter to Base Voltage V 2.0 IC Collector Current mA 50 PT Total Power Dissipation2 mW 205 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB. THERMAL RESISTANCE SYMBOLS PARAMETERS UNITS RATINGS Rth j-a Thermal Resistance from Junction to Ambient °C/W 600 Note: 1. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB. TYPICAL PERFORMANCE CURVES (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Pout (mW) 300 Mounted on Glass Epoxy PCB 2 (1.08 cm x 1.0 mm (t) ) 250 200 150 100 50 0 25 50 75 100 125 150 f = 1MHz 0.4 0.3 0.2 0.1 0 1 2 3 4 5 Ambient Temperature TA (ºC) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 6 000 60 VCE = 3 V IB: 50 µA step 400 µA 500 µA 50 DC Current Gain (hFE) Collector Current IC (mA) 0.5 300 µA 40 30 200 µA 20 100 µA 100 10 IB500 : 50 µA µA 0 1 2 3 4 5 6 7 Collector to Emitter Voltage VCE (V) 8 010 0.1 1 10 Collector Current IC (mA) 100 NE677M04 TYPICAL PERFORMANCE CURVES (TA = 25 °C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 3 V f = 2 GHz 10 5 0 10 100 35 VCE = 3 V Ic = 20 mA MSG MAG 25 20 15 |S21e|2 10 5 0 0.1 1 10 Collector Current IC (mA) Frequency f (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 VCE = 3 V f = 1 GHz MAG MSG 20 |S21e|2 15 10 5 0 1 10 100 25 VCE = 3 V f = 2 GHz 20 MSG MAG 15 |S21e|2 10 5 0 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 8 VCE = 3 V f = 2.5 GHz 16 VCE = 3 V f = 2 GHz Ga 20 15 10 Noise Figure NF (dB) Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 1 Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Gain Bandwidth Product fT (GHz) 15 MAG |S21e|2 6 12 4 8 2 4 5 0 1 NF 10 Collector Current IC (mA) 100 0 1 10 Collector Current IC (mA) 0 100 Associated Gain Ga (dB) Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY NE677M04 TYPICAL PERFORMANCE CURVES (TA = 25 °C) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 15 150 10 100 Pout ηc 5 50 Output Power Pout (dbm) Power Gain Gp (dB) 200 Collector Current IC (mA), Collector Efficiency ηc (%) 20 -15 -10 -5 0 GP 150 Pout 10 100 ηc 5 50 Ic 5 0 -15 0 -10 -5 0 0 10 5 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 20 250 25 200 20 GP 15 10 150 Pout 100 ηc 5 50 Output Power Pout (dbm) Power Gain Gp (dB) VCE = 3.2 V f = 1.8 GHz Icq = 8 mA (RF OFF) Collector Current IC (mA), Collector Efficiency ηc (%) 25 Output Power Pout (dbm) Power Gain Gp (dB) 200 15 Ic 0 -20 250 VCE = 2.8 V f = 1.8 GHz Icq = 8 mA (RF OFF) 15 VCE = 3.2 V f = 2.4 GHz Icq = 8 mA (RF OFF) GP -10 -5 0 Input Power Pin (dBm) 5 200 150 10 100 Pout ηc 5 50 Ic 0 -15 250 Ic 0 10 0 -15 -10 -5 0 Input Power Pin (dBm) 5 0 10 Collector Current IC (mA), Collector Efficiency ηc (%) Output Power Pout (dbm) Power Gain Gp (dB) GP 20 25 250 VCE = 3.2 V f = 0.9 GHz Icq = 8 mA (RF OFF) Collector Current IC (mA), Collector Efficiency ηc (%) 25 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER NE677M04 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 +90º j100 j25 j10 0 +45º +135º S22 10 25 S11 50 100 5 10 15 20 +180º +0º -j10 -45º -135º -j100 -j25 -90º -j50 NE677M04 VC = 2 V, IC = 10 mA FREQUENCY S11 GHz MAG 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 1.800 1.900 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 0.72 0.67 0.62 0.57 0.54 0.50 0.48 0.47 0.46 0.46 0.44 0.43 0.43 0.43 0.42 0.42 0.43 0.45 0.48 0.50 0.53 0.55 S21 ANG -28.02 -53.32 -74.47 -91.69 -105.42 -119.13 -128.64 -136.17 -143.27 -148.66 -170.56 179.75 176.51 173.63 159.00 144.48 129.44 115.14 102.37 91.32 81.53 72.28 MAG 23.85 21.19 18.36 15.78 13.68 11.77 10.42 9.33 8.43 7.70 5.30 4.47 4.24 4.04 3.26 2.73 2.34 2.04 1.79 1.59 1.42 1.27 S12 S22 ANG MAG ANG MAG 159.39 142.90 129.52 119.03 110.66 103.58 97.78 92.96 88.43 84.44 67.31 58.55 55.72 52.97 39.73 27.19 15.06 3.42 -7.89 -18.83 -29.44 -39.61 0.01 0.02 0.03 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.06 0.06 0.07 0.07 0.08 0.10 0.11 0.13 0.14 0.16 0.18 0.20 76.80 61.76 53.97 47.84 44.49 41.61 40.18 39.74 39.29 39.40 40.48 41.76 41.66 42.00 42.28 40.73 38.24 34.92 30.39 25.33 19.49 13.49 0.94 0.85 0.75 0.66 0.60 0.51 0.48 0.45 0.43 0.42 0.39 0.39 0.39 0.40 0.42 0.46 0.49 0.53 0.56 0.59 0.62 0.66 K MAG1 0.11 0.22 0.30 0.38 0.46 0.62 0.69 0.75 0.82 0.87 1.10 1.19 1.20 1.22 1.26 1.24 1.18 1.11 1.04 0.97 0.90 0.85 32.34 29.46 27.71 26.40 25.44 24.54 23.81 23.13 22.51 21.95 17.66 15.82 15.33 14.87 13.00 11.64 10.67 9.99 9.71 9.94 9.00 8.11 ANG -17.17 -30.90 -41.48 -49.21 -55.01 -57.12 -61.53 -63.91 -66.99 -69.40 -82.07 -89.26 -91.76 -94.18 -105.45 -115.95 -125.23 -134.51 -144.23 -154.88 -165.89 -176.84 (dB) Note: 1. Gain Calculations: MAG = |S21| |S12| (K – K 2- 1 ). When K ≥ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE677M04 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 +90º j100 j25 j10 0 +45º +135º S22 25 10 S11 50 100 10 20 30 +180º +0º -j10 -45º -135º -j100 -j25 -90º -j50 NE677M04 VC = 3 V, IC = 20 mA FREQUENCY S11 GHz MAG 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 1.800 1.900 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 0.58 0.53 0.49 0.46 0.44 0.42 0.42 0.41 0.41 0.41 0.40 0.39 0.39 0.39 0.39 0.39 0.41 0.43 0.45 0.48 0.51 0.53 S21 ANG MAG -36.91 -67.97 -91.49 -108.88 -121.87 -135.00 -143.29 -149.68 -155.84 -160.23 -178.96 172.52 169.64 167.05 153.59 139.95 125.64 111.98 99.88 89.38 80.01 71.10 34.82 29.03 23.80 19.70 16.66 14.16 12.41 11.03 9.91 9.01 6.14 5.16 4.90 4.66 3.75 3.14 2.68 2.34 2.06 1.83 1.64 1.47 S12 S22 ANG MAG ANG MAG 154.30 135.74 122.19 112.29 104.71 98.54 93.35 89.03 84.93 81.35 65.55 57.30 54.62 52.02 39.33 27.21 15.39 3.97 -7.19 -18.07 -28.76 -39.12 0.01 0.02 0.02 0.03 0.03 0.03 0.03 0.03 0.04 0.04 0.05 0.06 0.06 0.06 0.08 0.10 0.11 0.13 0.15 0.16 0.18 0.20 65.53 59.98 55.05 51.06 49.50 48.74 49.30 50.12 50.69 51.41 53.28 53.31 53.31 53.16 51.37 48.43 44.68 40.02 34.90 29.26 22.90 16.56 0.91 0.78 0.67 0.58 0.52 0.45 0.42 0.40 0.39 0.38 0.37 0.38 0.38 0.38 0.42 0.45 0.49 0.53 0.56 0.60 0.63 0.66 K MAG1 0.28 0.34 0.45 0.56 0.65 0.81 0.89 0.95 0.99 1.04 1.17 1.20 1.20 1.21 1.19 1.15 1.09 1.02 0.95 0.88 0.82 0.77 35.64 32.23 30.35 28.90 27.72 26.72 25.86 25.08 24.32 22.48 18.28 16.70 16.25 15.82 14.09 12.83 12.00 11.72 11.48 10.49 9.55 8.69 ANG -19.74 -33.77 -43.13 -49.18 -53.43 -53.84 -57.21 -58.72 -61.16 -63.04 -74.89 -82.12 -84.61 -87.15 -98.84 -109.77 -119.46 -129.07 -139.11 -150.00 -161.27 -172.54 (dB) Note: 1. Gain Calculations: MAG = |S21| |S12| (K – K 2- 1 ). When K ≥ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE677M04 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 +90º j100 j25 j10 0 +45º +135º S22 10 25 S11 50 100 10 20 30 40 +180º +0º -j10 -45º -135º -90º NE677M04 VC = 5 V, IC = 30 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 1.800 1.900 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 S11 MAG 0.53 0.48 0.44 0.42 0.41 0.39 0.39 0.38 0.38 0.38 0.37 0.37 0.37 0.37 0.37 0.37 0.38 0.40 0.43 0.46 0.49 0.51 S21 ANG -41.03 -73.66 -97.50 -114.52 -127.00 -139.82 -147.57 -153.47 -159.31 -163.26 179.14 171.01 168.30 165.83 152.63 139.29 125.14 111.70 99.67 89.42 80.22 71.38 MAG 40.66 32.81 26.31 21.49 18.03 15.28 13.34 11.83 10.62 9.64 6.55 5.50 5.22 4.96 3.99 3.33 2.85 2.49 2.19 1.95 1.74 1.56 S12 ANG 151.83 132.70 119.35 109.81 102.57 96.73 91.78 87.64 83.69 80.25 64.91 56.83 54.20 51.65 39.13 27.15 15.43 4.05 -7.08 -17.99 -28.73 -39.19 MAG 0.01 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.03 0.04 0.05 0.06 0.06 0.06 0.08 0.09 0.11 0.13 0.15 0.16 0.18 0.20 S22 ANG 79.56 64.08 56.29 53.44 53.31 53.08 54.05 55.02 55.65 56.16 58.22 57.93 57.51 57.41 54.90 51.63 47.27 42.60 37.08 31.31 25.13 18.62 MAG 0.89 0.75 0.63 0.56 0.50 0.43 0.41 0.40 0.39 0.38 0.37 0.38 0.39 0.39 0.43 0.46 0.50 0.54 0.58 0.61 0.65 0.68 ANG -20.30 -33.75 -42.07 -47.07 -50.52 -50.09 -52.99 -54.21 -56.48 -58.27 -70.16 -77.47 -80.11 -82.71 -94.79 -106.02 -116.01 -125.90 -136.09 -147.22 -158.70 -170.08 K 0.21 0.39 0.53 0.66 0.75 0.90 0.98 1.02 1.06 1.09 1.18 1.19 1.20 1.20 1.17 1.12 1.05 0.99 0.91 0.84 0.78 0.73 MAG1 (dB) 36.62 33.32 31.43 30.03 28.75 27.65 26.75 24.98 23.55 22.49 18.69 17.16 16.71 16.30 14.62 13.43 12.75 12.91 11.79 10.78 9.86 8.98 Note: 1. Gain Calculations: MAG = |S21| |S12| (K – K 2- 1 ). When K ≥ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 11/22/2002 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. 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