CEL UPC2756TB-E3-A

3 V SUPER MINIMOLD L-BAND
UPC2756TB
SI MMIC DOWNCONVERTER
FEATURES
INTERNAL BLOCK DIAGRAM
• HIGH DENSITY SURFACE MOUNTING:
6 Pin Super Minimold or SOT-363 package
• WIDE BAND OPERATION:
RF = 0.1 to 2.0 GHz
IF = 10 to 300 MHz
IF
Output
RF
Input
• ON BOARD OSCILLATOR
• SUPPLY VOLTAGE:
VCC = 2.7 TO 3.3 V
DESCRIPTION
NEC's UPC2756TB is a silicon MMIC integrated circuit manufactured using the NESAT III process. The device consists of
a double balance mixer, an IF amplifier and a built-in LO. this
device is suitable as a L-BAND downconverter for the receiver
stage of wireless systems. The UPC2756TB is pin compatible
and has comparable performance as the larger UPC2756T, so
it is suitable for use as a replacement to help reduce system
size. The IC housed in a 6 pin super minimold or SOT-363
package.
LO1
LO2
VCC
GND
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C, Vcc = 3 V, ZL = Zs = 50 Ω)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
UPC2756TB
S06
UNITS
MIN
TYP
ICC
Circuit Current (no signal)
PARAMETERS AND CONDITIONS
mA
3.5
6.0
fRF
RF Frequency Response
(3 dB down from the gain at fRF = 900 MHz, fIF = 150 MHz)
GHz
0.1
fIF
IF Frequency Response
(3 dB down from the gain at fRF = 900 MHz, fIF = 150 MHz)
MHz
10
300
CG
Conversion Gain1
fRF = 900 MHz, fIF = 150 MHz
fRF = 1.6 GHz, fIF = 20 MHz
dB
dB
11
11
14
14
17
17
NF
Noise Figure
fRF = 900 MHz, fIF = 150 MHz
fRF = 1.6 GHz, fIF = 20 MHz
dB
dB
10
13
13
16
PSAT
Saturated Output Power2
OIP3
SSB Output 3rd Order Intercept Point
fRF = 0.8~2.0 GHz, fIF = 100 MHz
fRF = 900 MHz, fIF = 150 MHz
fRF = 1.6 GHz, fIF = 20 MHz
ISO
LO Leakage, fLO = 0.8 ~2.0 GHz
PN
Phase Noise3, fOSC = 1.9 GHz
RTH (J-A)
at RF pin
at IF pin
Thermal Resistance (Junction to Ambient)
Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB
dBm
dBm
-11
-15
8.0
2.0
-8
-12
dBm
+4
dBm
dBm
-35
-23
dBc/Hz
-68
°C/W
MAX
325
Notes:
1. PRF = -40 dBm.
2. PRF = -10 dBm.
3. See Application Circuit.
California Eastern Laboratories
UPC2756TB
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
VCC
PARAMETERS
UNITS
RATINGS
V
5.5
Supply Voltage
RECOMMENDED
OPERATING CONDITIONS
SYMBOLS
mW
200
VCC
Operating Temperature
°C
-40 to +85
TOP
Storage Temperature
°C
-55 to +150
PT
Total Power
TOP
TSTG
Dissipation2
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85°C).
UNITS
MIN
TYP MAX
Supply Voltage
PARAMETERS
V
2.7
3.0
3.3
Operating Temperature
°C
-40
+25
+85
TEST CIRCUIT
0.1 µF
0.1 µF
3
LO1
LO2 4
C2
GND
1
RFIN IFOUT 6
0.1 µF
RF INPUT
VCC 5
C4
2
LO INPUT
C3
0.1 µF
3V
IF OUTPUT
0.1 µF
C5
C1
PIN FUNCTIONS
Pin No.
Symbol
Applied Voltage (V)
Pin Voltage (V)
1
RFIN
–
1.2
Description
Internal Equivalent Circuit
VCC
Signal input pin to double
balancec mixer. This pin must be
coupled to the signal source with a
blocking capacitor.
1
2
GND
0
–
3
LO1
–
1.2
Ground pin. This pin should be
connected to system ground with
minimum inductance. Ground
pattern on the board should be
formed as wide as possible.
These pins are both the basecollectors of a differential amplifier
configured to oscillate when
equipped with an external tank
resonator circuit. Each pin must be
coupled to the tank circuit with a
blocking capacitor. In the case of
an external LO source, bypass the
unused pin with a capacitor to
ground.
4
LO2
–
1.2
5
VCC
2.7 to 3.3
–
Power supply pin. This pin should
be externally equipped with a
bypass capacitor to minimize
ground impedance.
6
IFOUT
–
1.7
Output of single-ended push-pull
IF buffer amplifier. This is an
emitter-follower output with low
impedance. This pin must be
coupled to the next stage with a
blocking capacitor.
VCC
3
4
VCC
6
UPC2756TB
TYPICAL PERFORMANCE CURVES (TA = 25°C)
CIRCUIT CURRENT vs. VOLTAGE
CIRCUIT CURRENT vs. TEMPERATURE
10
10
No input signal
VCC = 3.0V
8
Circuit Current, Icc (mA)
Circuit Current, Icc (mA)
No input
signal
6
4
2
6
4
2
0
0
0
1
2
3
4
5
-40
6
0
+20
+40
+60
+80
Operating Temperature, TOP (°C)
CONVERSION GAIN AND NOISE
FIGURE vs. RF INPUT FREQUENCY
CONVERSION GAIN vs.
IF OUTPUT FREQUENCY
20
VCC = 3.3V
CG
15
VCC = 3.0V
VCC = 2.7V
20
10
NF
15
VCC = 3.0V
PRFin = -55 dbm
PLOin = -10 dbm
fIF = 150 MHZ
(Low-Side Lo)
VCC = 2.7V
10
Conversion Gain, CG (dB)
30
VCC = 3.3V
0.5
1.0
1.5
+100
VCC = 3.0V
PRFin = -55 dBm
PLOin = -10 dBm
fRF = 1.6 GHz
25
20
15
10
5
0
5
1
2
5
10
20
50
100
300
2.0
RF Input Frequency, fRF (GHz)
IF Output Frequency, fIF (GHz)
LO LEAKAGE AT RF PIN vs.
LO FREQUENCY
LO LEAKAGE AT IF PIN vs.
LO FREQUENCY
0
0
VCC = 3.0 V
PLOIN = -10 dBm
LO Leakage at IF Output Pin (dBm)
LO Leakage at RF Input Pin (dBm)
-20
Supply Voltage, Vcc (V)
25
Conversion Gain, CG (dB)
8
-10
-20
-30
-40
-50
VCC = 3.0V
PLOIN = -10 dBm
-10
-20
-30
-40
-50
-60
-60
1.4
1.6
1.8
LO Input Frequency, fLO (GHz)
2.0
0.8
1.0
1.2
1.4
LO Input Frequency (GHz)
1.6
UPC2756TB
IF Output Level, PIFOUT (dBm)
3rd Order Intermodulation Distortion, IM3 (dBm)
IF OUTPUT LEVEL AND IM3 vs.
RF INPUT LEVEL
+20
fRF1 = 900 MHz
fRF2 = 905 MHz
+10
fLO = 800 MHz
VCC = 3.0 V
0
-10
-20
-30
-40
-50
-60
-70
-80
-60
-40
-20
0
RF Input Level, PRFIN (dBm)
IF Output Level, PIFOUT (dBm)
3rd Order Intermodulation Distortion, IM3 (dBm)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
IF OUTPUT LEVEL AND IM3 vs.
RF INPUT LEVEL
+20
fRF1 = 2.0 GHz
fRF2 = 2.005 GHz
fLO = 1.9 GHz
+10
0
VCC = 3.0 V
-10
-20
-30
-40
-50
-60
-70
-40
-20
0
RF Input Level PRFIN (dBm)
VCO PHASE NOISE
(fVCO = 774.425 8 MHz center)
VCO OSCILLATION FREQUENCY vs.
TUNING VOLTAGE
VCO Oscillation Frequency, fVCO (GHz)
-60
-80
ATTEN 10 dB
RL -40.0 dBm
2.5
10 dB/
MKR -53.16 dB
10.0 kHz
VCC = 3 V
Vtune = 3 V
TA = +25°C
Monitor at pin 6
L = 7 nH
2.0
D
L = 15 nH
MKR
10.2 kHz
-53.16 dB
1.5
L = 30 nH
L = 50 nH
K
1.0
0.5
0
5
10
15
20
25
Tuning Voltage, VTU (V)
VCO PHASE NOISE
(fVCO = 1.639 194 2 MHz center)
ATTEN 10 dB
RL -40.0 dBm
10 dB/
MKR -40.34 dB
10.2 kHz
VCC = 3 V
Vtune = 3 V
TA = +25°C
Monitor at pin 6
MKR
D 10.2 kHz
-40.34 dB
K
CENTER 1.639 194 2 GHZ
RBW 1.0 kHz ++ VBW 100 Hz
SPAN 100.0 kHz
SWP 3.0 s
CENTER 774.425 8 MHZ
RBW 1.0 kHz ++ VBW 100 Hz
SPAN 100.0 kHz
SWP 3.0 s
UPC2756TB
TYPICAL SCATTERING PARAMETERS
5
2 3 4
1
1
2
6
5
3
4
RF Port
VCC = 3.0 V
1:
2:
3:
4:
5:
6:
100 MHz
500 MHz
900 MHz
1500 MHz
1900 MHz
3000 MHz
Start
Stop
519.8 Ω
59.3 Ω
38.3 Ω
31.5 Ω
28.5 Ω
25.7 Ω
0.10 GHz
3.10 GHz
Start
Stop
RF Port
VCC = 3.0 V
–j 1.1 Ω
–j 281.0 Ω
–j 157.0 Ω
–j 90.1 Ω
–j 67.9 Ω
–j 31.7
1:
2:
3:
4:
5:
50 MHz
80 MHz
130 MHz
240 MHz
300 MHz
22.5 Ω
24.2 Ω
30.2 Ω
42.6 Ω
46.6 Ω
0.05 GHz
3.00 GHz
+j 6.1 Ω
+j 11.3 Ω
+j 16.6 Ω
+j 17.5 Ω
+j 15.6 Ω
SYSTEM APPLICATION EXAMPLE
RX
BPF
UPC2756TB
BPF
Tuned Resonating
Tank
UPC2745TB
PLL Frequency
Synthesizer
LPF
VT
Reference
Oscillator
(Crystal)
UPC2756TB
OUTLINE DIMENSIONS (Units in mm)
LEAD CONNECTIONS
2.1±0.1
3
1.25±0.1
0.2 +0.1
-0
2.0±0.2
0.65 3
4
0.65 2
5
2
1.3
1
1
0.7
APPLICATION CIRCUIT EXAMPLE
D1
BIAS
L
3
5
5
2
6
6
1
VARACTOR*
DIODES
ORDERING INFORMATION
15 K Ω
5nH
30 nH
R1
C2
4
+0.1
0.15 -0.5
0 ~0.1
15 K Ω
4
1. RF INPUT
2. GND
3. LO1
4. LO2
5. VCC
6. IF OUTPUT
6
DOT ON
BACK SIDE
0.9 ± 0.1
(Bottom View)
(Top View)
C1W
PACKAGE OUTLINE S06
PART NUMBER
QTY
UPC2756TB-E3-A
3K/Reel
Note:
Embossed Tape, 8 mm wide,
Pins 1, 2, 3 are in tape pull-out direction.
R2
C3
0.1µF
0.1µF
3
LO1
LO2
4
2
GND
Vcc
5
1
RFIN
0.1µF
3V
0.1µF
IFOUT
C1
6
0.1µF
C5
* Recommended Varactor Diodes:
Alpha SMV1204-4,
Toshiba 1SV186
or equivalent
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
7/18/2000
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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