RoHS C1815 C1815 D T ,. L TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage O N 1 2 3 unless otherwise specified) R T Symbol IC C O Test conditions MIN TYP MAX UNIT Ic= 100µA, IE=0 60 V V(BR)CEO Ic= 0. 1 mA, IB=0 50 V V(BR)EBO IE= 100µA, IC=0 5 V ICBO VCB= 60V, IE=0 0.1 µA ICEO VCE= 50V, IB=0 0.1 µA IEBO VEB= 5V, IC=0 0.1 µA hFE(1) VCE= 6V, IC= 2mA Collector-emitter saturation voltage VCE(sat) IC= 100mA, IB= 10 mA 0.25 V Base-emitter saturation voltage VBE(sat) IC= 100 mA, IB= 10mA 1 V fT VCE= 10 V, IC= 1mA f=30MHz C E L Collector cut-off current Collector cut-off current E Emitter cut-off current J E DC current gain W Transition frequency 70 700 80 MHz CLASSIFICATION OF hFE(1) Rank Range O Y GR BL 70-140 120-240 200-400 350-700 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]