General Purpose Transistor SMD Diodes Specialist MMBT2907-G (PNP) RoHS Device Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -Device is designed as a general purpose 3 amplifier and switching. 0.056 (1.40) 0.047 (1.20) 1 2 0.083 (2.10) 0.006 (0.15) 0.002 (0.05) 0.066 (1.70) 0.103 (2.60) 0.086 (2.20) 0.044 (1.10) 0.035 (0.90) Collector 3 0.006 (0.15) max 1 Base 0.020 (0.50) 0.013 (0.35) 2 Emitter 0.007 (0.20) min Dimensions in inches and (millimeter) O Maximum Ratings(at T A =25 C unless otherwise noted) Symbol Max Unit V CBO -60 V Powe r di ssipa tioi n P CM 0. 3 W Collector current-Continuous I CM -0.6 A Parameter Collector-Base voltage St or ag e tempe rat ur e an d jun ction tempe rat ur e Min T STG , T J -55 o +1 50 C O Electrical Characteristics(at T A =25 C unless otherwise noted) Conditions Symbol Min Collector-Base breakdown voltage I C =-10µA, I E =0 V (BR)CBO -60 V Collector-emitter breakdown voltage I C =-10mA, I B =0 V (BR)CEO -40 V Emitter-base breakdown voltage I E =-10µA, I C =0 V (BR)EBO -5 V Collector cut-off current V CB =-50V, I E =0 I CBO -0.1 µA Collector cut-off current V CB =-35V, I B =0 I CEO -0.1 µA V EB =-3V, I C =0 I EBO -0.1 µA V CE =-10V, I C =-150mA h FE(1) 100 V CE =-10V, I C =-1mA h FE(2 ) 50 Collector-emitter saturation voltage I C =-500mA, I B =-50mA V CE(sat) -1 V Base-emitter saturation voltage I C =-500mA, I B =-50mA V BE(sat) -2 V Parameter Emitter cut-off current Max Unit 300 DC current gain V CE =-20V, I C =-50mA fT Transition frequency 200 Mhz F=100MHz REV:A QW-BTR04 Page 1